Tuning the morphology and optoelectronic properties of AgBiI₄ film through isopropanol treatment

Abstract

Lead-free halide perovskites have great potential as stable and nontoxic optoelectronic materials. As a promising photovoltaic candidate, AgBiI4 has attracted attention due to the eco-friendly property and strong stability, but...

Pure Tin Halide Perovskite Solar Cells: Focusing on Preparation and Strategies

“…CB and TL have been frequently used as antisolvent for different perovskite films. [91][92][93][94][95][96][97] But the Snbased perovskites usually experiment with rapid crystallization using CB or TL as antisolvent. [37] So, we can explore useful antisolvent to replace CB or TL.…”

“…[85][86][87][88][89][90] So far, chlo robenzene (CB) and toluene (TL) have been frequently used as antisolvent for different perovskite films. [91][92][93][94][95][96][97] However, Yan et al [37] proposed diethyl ether (DE) as a better alternative for Snbased perovskite crystallization. They demonstrated that DE could better retard the FASnI 3 perovskite crystallization com pared to CB or toluene, which leads to better film quality.…”

“…[ 85–90 ] So far, chlorobenzene (CB) and toluene (TL) have been frequently used as antisolvent for different perovskite films. [ 91–97 ] However, Yan et al. [ 37 ] proposed diethyl ether (DE) as a better alternative for Sn‐based perovskite crystallization.…”

Novel Ag-based thin film solar cells: concept, materials, and challenges

“…The anti-solvent treatment is usually used to control the crystallization of Ag-Bi-I in solution and obtain high-quality absorber films. The introduction of an anti-solvent (toluene, 70 chlorobenzene, 72 and isopropanol 73 ) can reduce the solubility of solute rapidly, thereby increasing the nucleation sites to form a dense film. Turkevych et al 70 reported a precursor crystal obtained by a solid-state reaction in a sealed tube.…”

“…8(c) shows the PV performance and morphology of the device before and after the addition of Li-TFSI. In 2022, Zhai et al 73 treated the AgBiI 4 thin film with the antisolvent isopropanol (IPA) to prepare a device of the planar heterojunction with the structure of ITO/ SnO 2 /AgBiI 4 /PTAA/Au. The PCE of the device increased from 0.82% to 1.61%.…”