“…Several strong electron-withdrawing acceptor units, such as isoindigo, diketopyrrolopyrrole, benzothiadiazole, naphthalenediimide (NDI), bis(2-oxoindolin-3-ylidene)benzodifurandione, bis(2-oxo-7-azaindolin-3-ylidene)benzodifurandione (BABDF), and bis(2-oxo-7-azaindolin-3-ylidene)-dihydroindoloindoledioneBAID, have so far been tested to construct n-type organic semiconductors through derivation and modification of their core units. ,,,,, However, most polymer semiconductor materials based on these acceptors rely on the structure of top-gate/bottom-contact (TG/BC) for successful unipolar n-channel organic field-effect transistor (OFET) devices. This depends particularly on the external passive-layer protection of the dielectric layer, insulating the water and oxygen from penetrating into the active layer and preventing the capture of hopping of electron carriers. − By contrast, devices fabricated in BG/TC configuration will hardly maintain unipolar n-type carrier transport characteristics upon doping of water and oxygen resulting from direct exposure of the organic semiconductor layer to the air atmosphere. , We previously reported high-performance air-stable unipolar n-type OFET devices with the BG/TC structure in the absence of passive protection. , We reported an air-stable n-type device using the BG/TC structure with the μ e value reaching 0.23 cm 2 V –1 s –1 under ambient conditions. The devices displayed high air stability and maintained unipolar electron transport with an μ e up to 0.1 cm 2 V –1 s –1 after 60 days of storage in air thanks to the kinetic barriers produced by tight molecular packing and hydrophobic interactions of molecules .…”