2016
DOI: 10.1016/j.physe.2016.03.014
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Tuning the electronic properties of single-walled SiC nanotubes by external electric field

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Cited by 8 publications
(2 citation statements)
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“…It was reported that the out-of-plane heterostructures show an indirect band gap, whereas the in-plane heterostructures show an direct band gap [28]. The external electric filed can also be used to modulate the band gap of the materials [29][30][31], the band gap decreased with the increase of intensity of electric field. Strains can also be used to modulate the electronic structure of the monolayer MoS 2 , which transform from direct semiconductor to indirect one as the strain applied with 1% and further to metal one with the strain above 10% [23].…”
Section: Introductionmentioning
confidence: 99%
“…It was reported that the out-of-plane heterostructures show an indirect band gap, whereas the in-plane heterostructures show an direct band gap [28]. The external electric filed can also be used to modulate the band gap of the materials [29][30][31], the band gap decreased with the increase of intensity of electric field. Strains can also be used to modulate the electronic structure of the monolayer MoS 2 , which transform from direct semiconductor to indirect one as the strain applied with 1% and further to metal one with the strain above 10% [23].…”
Section: Introductionmentioning
confidence: 99%
“…It is well-known that the external electric field can be used to modify the physical properties of nanomaterials such as SiC nanotubes [43], MoS 2 monolayers [44] and nanoribbons [45].…”
Section: Introductionmentioning
confidence: 99%