Tuning Superconductivity in Nanosecond Laser‐Annealed Boron‐Doped Si1–xGex Epilayers
Shimul Kanti Nath,
Ibrahim Turan,
Léonard Desvignes
et al.
Abstract:Superconductivity in ultradoped Si1−xGex:B epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to 7 at%. A Ge fraction x ranging from 0 to 0.21 is incorporated in Si:B: 1) through a precursor gas, by gas immersion laser doping; 2) by ion implantation, followed by nanosecond laser annealing; and 3) by ultrahigh‐vacuum‐chemical vapor deposition growth of a thin Ge layer, followed by nanosecond laser annealing. The 3… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.