2016
DOI: 10.1016/j.jcis.2015.09.074
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Tuning SnO 2 architectures with unitary or composite microstructure for the application of gas sensors

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Cited by 20 publications
(6 citation statements)
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References 47 publications
(52 reference statements)
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“…From Fig. 5a–e, it is clearly seen that the as-synthesized HTONF samples annealed at 400 °C show the biggest surface area (35.678 m 2 /g), which provides the biggest number of active sites and improves the gas sensitivity performance of the HTONF [30, 31]. In our opinion, the changes in specific surface area are part of a complex process of phase transformation accompanied with growth of nanostructures of different shapes such as leaves, needles, membranes, etc.…”
Section: Resultsmentioning
confidence: 99%
“…From Fig. 5a–e, it is clearly seen that the as-synthesized HTONF samples annealed at 400 °C show the biggest surface area (35.678 m 2 /g), which provides the biggest number of active sites and improves the gas sensitivity performance of the HTONF [30, 31]. In our opinion, the changes in specific surface area are part of a complex process of phase transformation accompanied with growth of nanostructures of different shapes such as leaves, needles, membranes, etc.…”
Section: Resultsmentioning
confidence: 99%
“…The binding energy of Sn 3d 3/2 (494.98 eV) and Sn 3d 5/2 (486.58 eV) in particular, are displayed in the pure SnO 2 , but a minor negative shift of 0.18 eV can be noted for the Sn 3d 3/2 (494.8 eV) and Sn 3d 5/2 (486.4 eV) in the WO 3 /SnO 2 (0.3%) composite (Figure 5B) (Lavacchi et al, 2000; Liu et al, 2016). Furthermore, a minor negative shift of the binding energy is also observed for the element of O 1s (Figure 5C), i.e., the lattice oxygen [530.38 eV (O I )] and chemisorbed oxygen (531.24 eV (O II )) for pure SnO 2 , while 530.38 eV (O I ) and 531.11 eV (O II ) are the values for the WO 3 /SnO 2 (0.3%) composite, wherein the chemisorbed oxygen of O II shifts negatively for 0.13 eV (Yang and Guo, 2016; Yang C. et al, 2019). Note that the gas sensing property is quite relative to the content of chemisorbed oxygen which increases by 9% after W modification, so the sensing performance would be remarkably improved (Teng et al, 2019).…”
Section: Resultsmentioning
confidence: 99%
“…Thus, the electron concentration will be reduced to form an electron depletion layer, resulting in a higher resistance. When the sensor is exposed to the reduced gas like acetone, it can react with the adsorbed O − and release the captured electrons back, thus decreasing the resistance (Das and Jayaraman, 2014; Yang and Guo, 2016).…”
Section: Resultsmentioning
confidence: 99%
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“…1,2 Therefore, the development of a reliable and sensitive as well as highly selective toluene sensor has become imperative. 3 Up to now, the sensors based on the ntype semiconductor oxides, such as SnO 2 , ZnO, TiO 2 , WO 3 and etc., [4][5][6][7] have been widely used to detect toxic gases due to their structure simple, facile integration, cost-efficiency and potential sensing performance to some of toxic reducing gases and oxidizing gases. 8 In contrast, the research and fabrication of sensors based on p-type oxide semiconductors, such as NiO, CuO, Co 3 O 4 and Cr 2 O 3 , to date are still in the early stages of development.…”
Section: Introductionmentioning
confidence: 99%