Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

Abstract

The impact of the processing method in controlling the polymorphism and field-effect charge mobility of 2,3-thienoimide-based oligothiophenes semiconductors was investigated.

Post-Deposition Wetting and Instabilities in Organic Thin Films by Supersonic Molecular Beam Deposition

“…In the past decades, a lot of studies have focused on the stability and self-organization of coated surfaces. Meso-structure modification induced by dewetting 7 – 9 and spreading effects 10 result ubiquitous for thin-film technology which can either be deleterious, destabilizing the thin-film structure, or advantageous, leading for example to the controlled formation of an array of nanometric islands 11 or micro-nano-patterning 12 , 13 .…”

2,3-Thienoimide-ended oligothiophenes as ambipolar semiconductors for multifunctional single-layer light-emitting transistors

“…In this regard, Benvenuti et al reported on the correlation between the type of deposition method and OFET characteristics, as a result of the diversely induced molecular packing. 48 Thermal sublimation and supersonic molecular beam deposition (SuMBD) were used as vacuum-based approaches for preparing thin films compatible with the fabrication of fieldeffect transistors, while lithographically controlled wetting (LCW) was used as a solution-deposition technique able to manipulate the growth of microstructured films. 76 Two different rates of deposition for both thermal sublimation and SuMBD were used for depositing C4-NT4N.…”

“…47 Hence, through various conventional and nonconventional deposition techniques, it was possible to obtain a specific molecular arrangement characterized by designed features. 48 The combination of all these characteristics highlights the great potential of 2,3-thienoimide oligothiophenes for OLET applications. This study aims at discussing how synthetic (Section 2) and post-synthetic (Section 3) methods influence the morphological and optoelectronic properties of this class of OSCs in view of their implementation as an ambipolar emissive layer of OLETs.…”

Perylene-Diimide Molecules with Cyano Functionalization for Electron-Transporting Transistors

“…Then, passing through an aerodynamic collimator (skimmer), the beam is skimmed by the carrier gas, going in a second vacuum chamber (base pressure of 10 −8 mbar) where the deposition on the substrate occurs, as illustrated in the scheme in Figure 2. By decoupling the control of E k from the deposition rate (R), this technique allows achieving unconventional deposition regimes [37][38][39].…”

“…Electronics 2019, 8, x FOR PEER REVIEW 5 of 36 aerodynamic collimator (skimmer), the beam is skimmed by the carrier gas, going in a second vacuum chamber (base pressure of 10 −8 mbar) where the deposition on the substrate occurs, as illustrated in the scheme in Figure 2. By decoupling the control of Ek from the deposition rate (R), this technique allows achieving unconventional deposition regimes [37][38][39]. Unless otherwise stated, PDI8-CN2 and PDIF-CN2 transistors were fabricated using standard multilayer structures equipped with 500-µ m thick highly-doped silicon (Si ++ ) acting as a gate electrode, a 200-nm thick SiO2 dielectric barrier and 150-nm thick (having a chromium adhesion layer) pre-patterned source/drain gold electrodes with interdigitated layout.…”