Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Yong, Zhihua; Persson, Karl‐Magnus; Ram, Mamidala Saketh; D’Acunto, Giulio; Liu, Yi; Benter, Sandra; Pan, Jisheng; Li, Zheshen; Borg, Mikael; Mikkelsen, Anders; Wernersson, Lars‐Erik; Timm, Rainer

doi:10.1016/j.apsusc.2021.149386

Cited by 61 publications

(31 citation statements)

References 42 publications

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“…[30,36,[52][53][54]115] Several studies have confirmed the possibility of interfacial switching in RRAM. [42,[55][56][57][58][59] Goux et al reported an ultra-thin 1-nm Al 2 O 3 interface in TiN/HfO 2 /Hf RRAM, which can minimize I SET to sub-500 nA. [30] The higher HRS in these devices originates from the large bandgap of the Al 2 O 3 layer.…”

Section: Resistive Switching Properties and The Impact Of Doping/allo...mentioning

confidence: 99%

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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116

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Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong in the memory arena over the last two decades. Its dielectric properties have been researched rigorously for the development of flash memory devices. In this review, the application of HfO2 in two main emerging nonvolatile memory technologies is surveyed, namely resistive random access memory and ferroelectric memory. How the properties of HfO2 equip the former to achieve superlative performance with high‐speed reliable switching, excellent endurance, and retention is discussed. The parameters to control HfO2 domains are further discussed, which can unleash the ferroelectric properties in memory applications. Finally, the prospect of HfO2 materials in emerging applications, such as high‐density memory and neuromorphic devices are examined, and the various challenges of HfO2‐based resistive random access memory and ferroelectric memory devices are addressed with a future outlook.

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Section: Resistive Switching Properties and The Impact Of Doping/allo...mentioning

confidence: 99%

“…In different types of RRAM devices, HfO 2 is one of the most researched switching oxide materials. [ 30–120 ] In RRAM devices, the actual resistive switching process is through filament formation or by controlling the interface. The HfO 2 is one of the established materials in CMOS domain along with SiO 2 , Al 2 O 3 , etc.…”

Section: Introductionmentioning

confidence: 99%

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Banerjee

Kashir

Kamba

2022

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116

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“…This results from the ability to easily form an oxygen reservoir which can replenish the dielectric during the reset process versus an amorphous electrode that has limited replenishing capability. A similar result is demonstrated by Zhihua Yong et al [282] while studing PVD vs ALD TiN crystallinity.…”

Section: Ito Resistivity Optimization By Annealingsupporting

confidence: 83%

Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity

Kalaga¹

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vi ACKNOWLEDGEMENT Sri Gurubhyo Namah| Sri Matre Namah|| My salutations to the Guru and Mother who have given me the strength, opportunity, fortitude and blessings to undertake a PhD. My sincere gratitude and thanks goes to my supervisor, Prof. Ang Diing Shenp from Nanyang Technological University (NTU), for offering me the opportunity to pursue a PhD degree under his supervision on the exciting topic that is the subject of this thesis. His sound technical guidance, constructive discussion and creative insights into semiconductor research have been the mainstay of my training in advanced research. His constant guidance and commitment to enriching the field of science have inspired my own approach to the world of scientific and technical research. I offer my sincere thanks to him for providing me with the opportunity to have worked with him.I also take this opportunity to thank Nanyang Technological University for the opportunity to pursue a PhD at a world-class institution along with the excellent research facilities and infrastructure available here, as well as for the various seminars that were organized which helped expand my knowledge of the research space. I would also like to thank Prof. Lew Wen Siang and Prof. Wang Hong for their assistance as members of my thesis advisory committee. My thanks go to the various technical and administrative staff I have interacted with for the equipment training, upkeep of facilities as well as quick redressal of issues that might have otherwise hampered my research pursuits.

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“…To calculate the band offset more accurately and reliability, the fitted spectra of HfO‐600 sample by Gaussian–Lorentzian (G–L) functions with Shirley‐type background subtraction are shown in Figure 4C. During the curve fitting process, the spin–orbit split value of the Hf4f doublets are fixed at 1.71 eV, and the area ratio between Hf4f 7/2 and Hf4f 5/2 peaks is kept to 1.33 29 . Finally, the Hf4f 7/2 peak is fitted with two components; the one with lower binding energy (18.1 eV) represents Hf–O binding energy from HfO 2 and the other one a Hf‐silicate form.…”

Section: Resultsmentioning

confidence: 99%

Structural and electronic properties of HfO₂ films on Si through H₂O₂ wet oxidation with improved thermal stability

Lin

Chen

et al. 2022

Surface & Interface Analysis

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The thermal stability and material properties of HfO2 thin films on Si substrates with and without H2O2 wet chemical oxidation were investigated. The HfO2 samples were deposited through plasma‐enhanced atomic layer deposition and subjected to thermal annealing. They were then examined using X‐ray diffraction, transmission electron microscopy, X‐ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, and conductive atomic force microscopy. For the Si substrate without H2O2 wet chemical oxidation, a native oxide (~1.8 nm) was formed on the substrate before HfO2 deposition. After the annealing process at 600°C, the band gap (Eg) of the HfO2 films increased from 6.0 to 6.2 eV due to the diffusion of Si into HfO2. Furthermore, the conduction and valence band offsets (ΔEc and ΔEv, respectively) between HfO2 and Si changed from 1.02 to 1.42 and 3.86 to 3.66 eV, respectively. After the H2O2 wet oxidation of the Si substrate, a 1.5‐nm chemical oxide was formed instead of a native oxide. The band offset and Eg values of HfO2 were similar before and after 600°C annealing (ΔEv = 3.86 eV, ΔEc = 1.02 eV, and Eg = 6.0 eV), implying the high thermal stability of the HfO2 films. Accordingly, wet oxidation not only prevents diffusion from chemical oxide but also markedly improves the oxide leakage current, which is useful for developing highly efficient and thermally stable HfO2 gate oxides in Si‐based integrated circuit devices.

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Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Cited by 61 publications

References 42 publications

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity

Structural and electronic properties of HfO₂ films on Si through H₂O₂ wet oxidation with improved thermal stability

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Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Cited by 61 publications

References 42 publications

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Functionalization of transparent oxide resistive random-access memories for visible light photosensitivity

Structural and electronic properties of HfO2 films on Si through H2O2 wet oxidation with improved thermal stability

Contact Info

Product

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Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Hafnium Oxide (HfO₂) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

Structural and electronic properties of HfO₂ films on Si through H₂O₂ wet oxidation with improved thermal stability