2022
DOI: 10.1103/physrevb.106.144429
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Tuning of topological properties in the strongly correlated antiferromagnet Mn3Sn via Fe doping

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Cited by 10 publications
(15 citation statements)
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“…−1 (0.24 MJ m −3 ), respectively, which indicates that magnetization easy axis is the c-axis. This point agrees with the experimentally observed out-of-plane magnetic anisotropy at x = 0.35 11) and x = 0.58. 7) At x ⩾ 1.00, the MAEs turn to be negative and the IFM phase is most stable.…”
Section: Energy Differencessupporting
confidence: 91%
See 1 more Smart Citation
“…−1 (0.24 MJ m −3 ), respectively, which indicates that magnetization easy axis is the c-axis. This point agrees with the experimentally observed out-of-plane magnetic anisotropy at x = 0.35 11) and x = 0.58. 7) At x ⩾ 1.00, the MAEs turn to be negative and the IFM phase is most stable.…”
Section: Energy Differencessupporting
confidence: 91%
“…[6][7][8][9] For example, at x = 0.58, 7) x = 0.90, 8) and x = 1.10, 9) by the measurement of temperature dependence of magnetization under external magnetic field, it has been understood that the ferromagnetic (FM) and antiferromagnetic (AFM) phases coexist at low temperatures. 10) Moreover, at x = 0.35 11) and x = 0.58, 7) the MAEs are 0.53 MJ m −3 and 0.47 MJ m −3 , 12 ) respectively, indicating that the easy magnetization axis is the c-axis. As x is increased up to 1.50 and 10% of Sn is substituted by Sb, i.e.…”
Section: Introductionmentioning
confidence: 94%
“…Among the MWSMs, noncollinear and coplanar Mn 3 X (X = Sn and Ge) antiferromagnets have recently received a great deal of attention from the research community due to their distinct magnetic and topological properties despite sharing a similar crystal structure. For instance, Mn 3 Sn shows a magnetic transition within 260-275 K from a high-temperature noncollinear antiferromagnetic (AFM) order to a low-temperature spin-spiral structure [17][18][19]. In contrast, no such magnetic transition has been observed to date in Mn 3 Ge down to the lowest possible temperature [20][21][22][23][24].…”
Section: Introductionmentioning
confidence: 99%
“…However, doping foreign elements can be an effective way to induce the out-of-plane moment and hence the finite THE in the system. [40] DOI: 10.1002/pssr.202300174 Topologically protected nontrivial spin structures attract significant interest in condensed matter physics for their utilization in low-power-consumption spintronics devices, memory devices, etc. The topological Hall effect (THE) is an additional Hall resistivity in the system arising from real-space Berry curvature picked up by conduction electron passing through the nontrivial spin texture.…”
Section: Introductionmentioning
confidence: 99%
“…However, doping foreign elements can be an effective way to induce the out‐of‐plane moment and hence the finite THE in the system. [ 40 ]…”
Section: Introductionmentioning
confidence: 99%