Tuning of the metal-insulator transition in electrolyte-gated NdNiO3 thin films

Abstract

We demonstrate electrostatic control of the metal-insulator transition in the typical correlated-electron material NdNiO3 through a large effective capacitance of the electric double layer at the electrolyte/NdNiO3 interface. The metal-insulator transition temperature (TMI) of NdNiO3 is shown to decrease drastically with increasing hole concentration through the application of a negative gate voltage (VG). The shift in TMI (|ΔTMI|) is larger for thinner NdNiO3; for VG of −2.5 V, |ΔTMI| of 5-nm-thick NdNiO3 is as large as 40 K, and the resistivity change near 95 K is one order of magnitude. This study may be potentially applicable to Mott transistor devices.

Colossal resistance switching and band gap modulation in a perovskite nickelate by electron doping

“…Band gap opening accompanying such charge disproportionation, both theoretically and experimentally, scales to be at a few hundred millivolts 1,6 . Besides, the extremely short electrostatic screening length makes the resistance modulation challenging via electrostatic gating, as typical 10-30% carrier doping per unit cell is required to induce a phase transition even with ionic liquids [10][11][12][13][14] .…”

DC current induced metal-insulator transition in epitaxial Sm0.6Nd0.4NiO3/LaAlO3 thin film

“…For example, via applying a static electric field on NdNiO 3 films with ionic liquid, the electric field induced shift of T MI results in a strong variation of the phase-dependent charge density. 11,12 The electrothermally actuated MIT in SmNiO 3 have also been observed above room temperature in thin film two-terminal devices. 13 In this letter, we will show that the DC current can also induce the MIT in nickelate thin film.…”

Field-effect diode based on electron-induced Mott transition in NdNiO3

“…The effects of electrical gating on the MIT have been demonstrated in La 0.8 Ca 0.2 MnO 3 films backgated through the substrate, and in NdNiO 3 (NNO) films gated through ionic liquids. [11][12][13][14][15] The electric fieldinduced variations of MIT temperature T MI resulted in a strong variation of the phase-dependent charge density.[17] These experiments provided a significant fundamental insight into the interplay between the charge carrier density and phase transitions in correlated oxides.Studies of electric field effects have so far focused on three-terminal field-effect transistor (FET) structures incorporating a gate electrode separated from the oxide film by an electrically insulating gate dielectric. However, these studies have been constrained by the difficulty of incorporating complex oxides into the standard threeterminal FET structure with a separate gate electrode.…”

“…The effects of electrical gating on the MIT have been demonstrated in La 0.8 Ca 0.2 MnO 3 films backgated through the substrate, and in NdNiO 3 (NNO) films gated through ionic liquids. [11][12][13][14][15] The electric fieldinduced variations of MIT temperature T MI resulted in a strong variation of the phase-dependent charge density. [17] These experiments provided a significant fundamental insight into the interplay between the charge carrier density and phase transitions in correlated oxides.…”