2016
DOI: 10.1021/acs.jpcc.6b07221
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Tuning of Structural and Optical Properties of Graphene/ZnO Nanolaminates

Abstract: Zinc Oxide (ZnO) and graphene (G) have been extensively studied because of their unique physical properties. Here, Graphene-Zinc Oxide (G/ZnO) nanolaminates were fabricated, respectively, by chemical vapor deposition and low temperature atomic layer deposition technique. The number of obtained G/ZnO layers was tuned from 1 to 11 with a total thickness of 100 nm for all prepared nanolaminates. The structure, optical properties and interaction between G and ZnO were studied by X-ray methods, TEM, AFM, Raman and … Show more

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Cited by 77 publications
(58 citation statements)
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“…[128] Atomic layer deposition (ALD) is gaining increasinga ttention in the energya nd environmental fields as ap romising methodf or surfacem odification and protection. [132][133][134][135] The originality of ALD was given to Professor Aleskovskii and his team in 1960 when they realizedt he deposition of TiO 2 from TiCl 4 and H 2 O. [132][133][134][135] The originality of ALD was given to Professor Aleskovskii and his team in 1960 when they realizedt he deposition of TiO 2 from TiCl 4 and H 2 O.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
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“…[128] Atomic layer deposition (ALD) is gaining increasinga ttention in the energya nd environmental fields as ap romising methodf or surfacem odification and protection. [132][133][134][135] The originality of ALD was given to Professor Aleskovskii and his team in 1960 when they realizedt he deposition of TiO 2 from TiCl 4 and H 2 O. [132][133][134][135] The originality of ALD was given to Professor Aleskovskii and his team in 1960 when they realizedt he deposition of TiO 2 from TiCl 4 and H 2 O.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
“…[129][130][131] ALD is a vapor deposition method of ultrathin layers. [132][133][134][135] The originality of ALD was given to Professor Aleskovskii and his team in 1960 when they realizedt he deposition of TiO 2 from TiCl 4 and H 2 O. [136] ALD is ad eposition technique that derives from the CVD technique;i ti sb ased on two self-limiting reactions absolutely separated in the gas phases.…”
Section: Atomic Layer Depositionmentioning
confidence: 99%
“…If not specified otherwise, 500 cycles have been used to prepare the alumina films. Please note that the ALD process has first been studied on Si samples, where the thickness could easily be measured using spectroscopic ellipsometry (Semilab GES5E) (Baitimirova et al, 2016). Following the ALD, some of the samples were thermally treated at 1,150 • C at a heating rate of 5 • C/min with a dwell at this temperature for 1 or 10 h, depending on the samples.…”
Section: Methodsmentioning
confidence: 99%
“…Several vapor phase methods are adopted for the deposition of ZnO thin films, such as sputtering [9], pulsed laser deposition [10], and atomic layer deposition (ALD). ALD, either thermal or enhanced by plasma (PE-ALD), has often been adopted as the method of choice to deliver high quality (ultra-)thin ZnO films [4,[11][12][13][14][15][16]. Polycrystalline thin films were obtained down to room temperature [4,17,18].…”
Section: Introductionmentioning
confidence: 99%