Tuning of resist slope with hard-baking parameters and release methods of extra hard photoresist for RF MEMS switches

Saha, Subhajit; Sagberg, Håkon; Poppe, Erik; Jensen, Geir Uri; Fjeldly, Tor A.; Sæther, Trond

doi:10.1016/j.sna.2007.10.067

Cited by 18 publications

(8 citation statements)

References 16 publications

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“…Ideally, developed photoresists will form vertical sidewalls on the patterned substrates. In reality, positive toned resists might form a positive slope after being subjected to hard bake conditions [13]. This results in less resist volume to protect the pattern edges.…”

Section: Deposited Poly-si As On-demand Linewidth Compensator For On-mentioning

confidence: 99%

Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation

Goh

Chen

Shiau

et al. 2019

J. Micromech. Microeng.

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Deep reactive ion etching (DRIE) is an important process for etching vertical structures for microelectromechanical systems. Due to the sidewall profile of some photoresists as well as effects from upstream processes, bulk micromachined structures, to a certain extent, could differ from expected. Concerning photonics applications, minute deviations from the intended design might alter its optical characteristics. The most popular approach is to introduce a compensation factor during mask design. However, such a method is not robust enough to accommodate batch variations due to varying process conditions.In one particular example specific to this work, the simulated passband for a Si-air Fabry-Perot interferometer configuration was 3.67 μm. However, post DRIE the passband was measured to be 3.40 μm. To resolve this discrepancy, linewidth compensation using low-pressure chemical vapor deposition (LPCVD) poly-Si is presented. When 170 and 194 nm of poly-Si were separately deposited, the passbands redshifted to 3.54 and 3.57 μm, respectively. With the LPCVD poly-Si layer being highly conformable, the full width half maximum remains unchanged at 80 nm. An on-chip linear variable optical filter was demonstrated with a compensation of 194 nm poly-Si. It was observed that the working range redshifted from 3.0-3.9 μm to 3.3-4.5 μm.

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Section: Deposited Poly-si As On-demand Linewidth Compensator For On-mentioning

confidence: 99%

Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation

Goh

Chen

Shiau

et al. 2019

J. Micromech. Microeng.

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show abstract

“…HiPR 6517 photoresist was used as a sacrificial layer. The resist thickness was 2.55 μm and patterned by standard lithography and special baking methods as described in detail in [12]. Then, 1.1 μm thick gold was sputtered and patterned by wet etch.…”

Section: Fabrication Of the Filtermentioning

confidence: 99%

“…Low tensile stress ensures low-pull-down voltage and gives better reliability. Finally, the shunt capacitive bridges were released by dissolving the resist in acetone and dried in a critical point dryer [12]. Scanning electron microscope (SEM) images of the fabricated filter are shown in Figure 4.…”

Section: Fabrication Of the Filtermentioning

confidence: 99%

Tunable Lowpass Filter with RF MEMS Capacitance and Transmission Line

Saha

Hanke

Sagberg

et al. 2012

Active and Passive Electronic Components

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We have presented an RF MEMS tuneable lowpass filter. Both distributed transmission lines and RF MEMS capacitances were used to replace the lumped elements. The use of RF MEMS capacitances gives the flexibility of tuning the cutoff frequency of the lowpass filter. We have designed a low-pass filter at 9-12 GHz cutoff frequency using the theory of stepped impedance transmission lines. A prototype of the filter has been fabricated using parallel plate capacitances. The variable shunt capacitances are formed by a combination of a number of parallel plate RF MEMS capacitances. The cutoff frequency is tuned from C to X band by actuating different combinations of parallel capacitive bridges. The measurement results agree well with the simulation result.

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“…HiPR 6517 photoresist was used as a sacrificial layer. The resist thickness was 2.55 µm and patterned by standard lithography and special baking methods (D) as described in detail in [16]. Then 1.1 µm thick gold was sputtered and patterned by wet etch (E).…”

Section: Fabrication Of the Filtermentioning

confidence: 99%

Tunable Band-Pass Filter Using Rf Mems Capacitance and Transmission Line

Saha

Hanke²,

Sagberg³

et al. 2011

PIER C

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Abstract-In this paper we present the design and fabrication of an RF MEMS tunable band-pass filter. The band-pass filter design uses both distributed transmission lines and RF MEMS capacitances together to replace the lumped elements. The use of RF MEMS variable capacitances gives the flexibility of tuning both the centre frequency and the band-width of the band-pass filter. A prototype of the tunable band-pass filter is realized using parallel plate capacitances. The variable shunt and series capacitances are formed by a combination of parallel plate RF MEMS shunt bridges and series cantilevers. The filter operates at C-X band. The measurement results agree well with the simulation results.

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Tuning of resist slope with hard-baking parameters and release methods of extra hard photoresist for RF MEMS switches

Cited by 18 publications

References 16 publications

Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation

Deposited poly-Si as on-demand linewidth compensator for on-chip Fabry–Perot interferometer and vertical linear variable optical filter bandpass and passband manipulation

Tunable Lowpass Filter with RF MEMS Capacitance and Transmission Line

Tunable Band-Pass Filter Using Rf Mems Capacitance and Transmission Line

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