Tuning of photosensitivity and optical parameters of ZnO based photodetectors by co-Sn and Ti doping

Aslan, Esra; Zarbali, M.

doi:10.1016/j.optmat.2022.112030

Cited by 23 publications

(7 citation statements)

References 34 publications

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“…Optical conductivity (σ opt ) indicates the optical absorption and has a relationship with α and n . The σ opt can be expressed as follows − : σ opt = α n c 4 π where c stands for the speed of light. Figure presents the variation in the optical conductivity (σ opt ) with the photon energy.…”

Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Interfacial InSe Thin Film

Emir,

Tataroglu,

Coşkun

et al. 2024

ACS Omega

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This study presents a comprehensive investigation of the optical and structural characteristics of the indium selenide (InSe) film prepared on a glass substrate. The structural characteristics of the InSe film were analyzed using characterization techniques including X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy while the UV–vis spectrophotometry method was used in the spectral range between 500 and 1000 nm to examine the optical characteristics. Thus, the UV–vis spectroscopic data were used to extract several optical parameters including extinction coefficient (k), optical band gap (E g), refractive index (n), absorption coefficient (α), and optical conductivity (σopt). The optical transition of InSe was found as a direct transition. However, the optical analysis of this study has revealed that the InSe film has the potential to be used in various optoelectronic and photovoltaic applications.

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Section: Resultsmentioning

confidence: 99%

Structural and Optical Properties of Interfacial InSe Thin Film

Emir,

Tataroglu,

Coşkun

et al. 2024

ACS Omega

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“…(1) and (2) were used to derive the expression that relates the lattice parameters and the Miller indices (Eq. 3) [26,27].…”

Section: Xrd Resultsmentioning

confidence: 99%

Role of native defects on the opto-electronic properties of p-type ZnO synthesized during the most straightforward method: only water

Zagal-Padilla

Gamboa

2023

Appl. Phys. A

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The influence of predominant native defects in forming ZnO with p-type conductivity is discussed in this work when the semiconductor is synthesized only in water. The semiconductor was prepared by dissolving a Zn-salt in deionized water at 80 °C. The powders were thermally treated at 400 °C in an air atmosphere to obtain well-defined crystalline ZnO. XRD, SEM, EDS, Raman spectroscopy, diffuse reflectance, photoluminescence, and Seebeck effect techniques were used to characterize the synthesized material. The results showed a well-crystalline semiconductor in wurtzite phase. The crystal-oriented growth was the (002) plane. The sample morphology was formed by highly ordered sticks-like. The optoelectronic characterization showed that the synthesized ZnO had a lower band gap than that reported in the literature. It was related to deep energy levels corresponding to oxygen interstitials as the predominant native defects. Raman, EPR, and photoluminescence spectra analysis corroborated the existence of native defects in the crystalline structure. The p-type conductivity of the sample was determined by Seebeck coefficient analysis. A synthesis reaction mechanism involving the formation of oxygen interstitials was proposed in this work. Understanding the effects of native defects in wide band gap semiconductors is necessary to design new materials for sensors or energy conversion applications.

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“…The below Scherrer relation was used for the calculation of the crystallite size of samples [ 35 , 36 ]:

where λ is the wavelength of the monochromatic X-ray, D is the crystallite size, θ is the Bragg angle, FWHM (abbreviated from full width at half maximum) is the broadening at half of the maximum intensity, and K is the shape factor (0.89 in the present study) [ 36 , 37 ]. In particular, the peak belonging to the FWHM of the XRD pattern comes from two parts: the first part is the peak width of the instruments which can be detected and eliminated by fully annealed Si powder, and the other part is the peak width caused by the crystal structure characteristics such as the grain size and the dislocation density of the material.…”

Section: Resultsmentioning

confidence: 99%

Anisotropy in the Tensile Properties of a Selective Laser Melted Ti-5Al-5Mo-5V-1Cr-1Fe Alloy during Aging Treatment

et al. 2022

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In this work, the anisotropic microstructure and mechanical properties of selective laser melted (SLMed) Ti-5Al-5Mo-5V-1Cr-1Fe (Ti-55511) alloy before and after aging treatment are investigated. Owing to the unique thermal gradient, the prior columnar β grains with {001} texture component grow in the building direction, and the mechanical properties of the as-fabricated Ti-55511 alloy exhibit slight anisotropy. Aging treatment creates uniform precipitation of the α phase at the boundaries as well as the interior of β grains. Due to the microstructure of the aged samples with a weak texture, the mechanical properties exhibit almost isotropic characteristics with an ultimate tensile strength of 1133 to 1166 MPa, yield strength of 1093 to 1123 MPa, and elongation from 13 to 16%, which meet the aerospace allowable specification very well. By XRD and EBSD analyses, the total dislocation density of the aged samples (~134.8 × 1013 m−2) is significantly lower than that of the as-fabricated samples (~259.4 × 1013 m−2); however, the aged samples exhibit a higher geometrically necessary dislocation (GND) density (~28.5 × 1013 m−2) compared with the as-fabricated samples GND density (~2.9 × 1013 m−2). Thus, a new approach to strengthening theory for estimating the anisotropic mechanical properties of AM alloys is proposed.

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Tuning of photosensitivity and optical parameters of ZnO based photodetectors by co-Sn and Ti doping

Cited by 23 publications

References 34 publications

Structural and Optical Properties of Interfacial InSe Thin Film

Structural and Optical Properties of Interfacial InSe Thin Film

Role of native defects on the opto-electronic properties of p-type ZnO synthesized during the most straightforward method: only water

Anisotropy in the Tensile Properties of a Selective Laser Melted Ti-5Al-5Mo-5V-1Cr-1Fe Alloy during Aging Treatment

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