We report the effect of Ru thickness (t Ru ) on ferromagnetic resonance (FMR) line-width of Ru(t Ru )/Py(23 nm) bilayer samples grown on Si(100)/SiO 2 substrates at room temperature by magnetron sputtering. The FMR line-width is found to vary linearly with frequency for all thicknesses of Ru, indicating intrinsic origin of damping. For Ru thicknesses below 15 nm, Gilbert-damping parameter, a is almost constant. We ascribe this behavior to spin back flow that is operative for Ru thicknesses lower than the spin diffusion length in Ru, k sd . For thicknesses >15 nm (>k sd ), the damping constant increases with Ru thickness, indicating spin pumping from Py into Ru. V C 2015 AIP Publishing LLC. [http://dx.