A square graphene single electron transistor (SET) was defined with two side gates, and its transport was studied at low temperature at T = 2 K. At zero magnetic field, Coulomb blockade oscillations were clearly observed near the Dirac point of this device. At high magnetic field, in the quantum Hall regime, we observed ballistic tunneling of the carriers through the graphene SET, contrary to the Coulomb blockades observed while approaching the vicinity of the Dirac point. graphene, single electron transistor, Coulomb blockade, tunneling, quantum Hall state PACS number(s): 72.80Vp, 73.23.Hk, 73.43.-f Citation: Tan Z B, Liu G T, Lu L, et al. Observation of Coulomb blockade and ballistic tunneling in graphene single electron transistor.Quantum point contacts, single electron transistors and quantum dots have been widely studied in the past decades [1][2][3][4][5][6][7][8]. They are widely used as tools to determine the integer and fractional charges in the quantum Hall regime [3,4], and to study the electron interference behavior of the edge states [5,6] and the tunneling/scattering between edge channels near the constrictions [7,8]. Graphene, a single layer of carbon atom sheet, has been intensively studied recently due to its unique linear energy dispersion and the potential of making all carbon devices. Quite a few work on graphene constrictions and single electron transistor (SET) has been reported [9][10][11][12][13]. Here, we report our low temperature transport study on a graphene SET: When approaching the vicinity of the Dirac point, Coulomb blockade oscillations were clearly observed in the SET with and without magnetic field. At high magnetic field in the quantum Hall regime, ballistic tunneling through the edge state was observed.