2013
DOI: 10.1016/j.solmat.2013.06.028
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Tuning iron pyrite thin film microstructure by sulfurization of columnar iron precursors

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Cited by 10 publications
(5 citation statements)
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“…The indirect band gap of films estimated to be 0.98 ± 0.04 eV having resistivity of 2.2 Ω cm and carrier mobility on the order of 0.1 cm 2 V −1 s −1 with majority carrier concentrations in the range of 10 18 cm −3 to 10 19 cm −3 . The lifetime of photo‐carriers was measured as 27 ps with ultrafast optical‐pump/THz‐probe as high efficiency devices require longer carrier life time …”
Section: Pyrite Thin Films For Photovoltaicsmentioning
confidence: 99%
“…The indirect band gap of films estimated to be 0.98 ± 0.04 eV having resistivity of 2.2 Ω cm and carrier mobility on the order of 0.1 cm 2 V −1 s −1 with majority carrier concentrations in the range of 10 18 cm −3 to 10 19 cm −3 . The lifetime of photo‐carriers was measured as 27 ps with ultrafast optical‐pump/THz‐probe as high efficiency devices require longer carrier life time …”
Section: Pyrite Thin Films For Photovoltaicsmentioning
confidence: 99%
“…The synthesis of iron pyrite by thermal sulphidation has been popular since the 1980s, which was used for preparing iron pyrite for the manufacturing of solar devices. Many types of precursor materials have been employed in the reported studies, including iron lms, [91][92][93][94][95][96][97][98][99] iron oxide lms, 100-105 iron sulphide lms 106,107 and other typical chemicals. 1,[108][109][110][111][112][113][114][115][116][117] The terminal morphology of iron pyrite is determined by the precursor materials.…”
Section: Sulphidation Synthesis Of Iron Pyrite With Different Morpholmentioning
confidence: 99%
“…2) Recently, various studies revealed that the existence of a surface inversion layer on the iron pyrite surface and the high density of deep donor defect states in bulk iron pyrite are related to low V OC . [5][6][7] On the other hand, pyrite nanostructures 8,9) and nano- [10][11][12] and polycrystalline thin films [13][14][15][16] show p-type conduction. In these studies, FeS 2 thin-film solar cells were fabricated.…”
Section: Introductionmentioning
confidence: 99%