Cyclic
voltammetric and femtosecond transient absorption (TA) measurements
on Cu+-doped CdSe nanocrystals (NCs) were utilized to reveal
the energetics of the electroactive Cu+ dopant with respect
to the band energies of CdSe NC host and the influence of Cu in tuning
the carrier dynamics, respectively. Oxidation–reduction peaks
due to an electroactive dopant within CdSe NC host have been traced
to determine its energy level which was correlated to the dopant emission
energy and Stokes shift. The low doping density of Cu does not significantly
alter the band structure of CdSe as the shape of the TA spectra remains
similar before and after doping. However, Cu+ acts as a
hole localizing center decoupling the electronic wave function from
the hole leading to slower Auger-assisted electron cooling in doped
NCs. As hole localization to Cu+ is the primary step for
dopant emission, in the presence of hole quenchers (aminophenols)
the dopant emission gets drastically quenched. Interestingly, once
hole is captured by Cu+ due to strong affinity for electron,
external quenchers (nitrophenols) are unable to capture the electron
as confirmed from steady state and time-resolved measurements establishing
the role of Cu as an internal sensitizer for the charge carriers.