Tuning high-power laser diodes with as much as 038 W of power and M^2 = 12 over a range of 32 nm with 3-GHz bandwidth

Raab, Volker; Skoczowsky, Danilo; Menzel, Ralf

doi:10.1364/ol.27.001995

Cited by 34 publications

(10 citation statements)

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“…With diffractive grating loaded external cavity, the demonstrated PCE was even lower and was estimated to be approximately 5% (200 mW, 2A) with M 2~1 .3 and laser spectrum line-width ~8 pm [34]. In order to suppress the intrinsic BALD mode oscillation and increase PCE of the single transverse mode emission, the ARcoating with lower reflectivity is needed.…”

Section: Methodsmentioning

confidence: 99%

“…Applying low anti-reflection (AR) coating to a BALD and employing external optical feedback to a BALD can limit the number of transverse modes. A variety of external feedback designs can limit the number of transverse modes of BALD and improve the beam quality [26][27][28][29][30][31][32][33][34][35][36][37][38]. The off-axis optical feedback was introduced to enhance one transverse mode and significantly increase beam quality of BALD [33,34,36,38].…”

Section: Introductionmentioning

confidence: 99%

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Coherent beam combining of high power broad-area laser diode array with near diffraction limited beam quality and high power conversion efficiency

Liu¹,

Braiman²

2013

Opt. Express

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We explored a path of achieving high quality phase-locking of broad-area laser diode (BALD) array that operates at high electrical to optical power conversion efficiency (PCE). We found that (a) improving single transverse mode control for each individual BALD, (b) employing global Talbot optical coupling among diodes, and (c) enhancing strength of optical coupling among diodes are key factors in achieving high quality phase-locking of high power BALD array. Subsequently, we redesigned and improved a V-shaped external Talbot cavity and employed low reflectivity anti-reflection (AR) coated, low-"smile" BALD array to meet these three important requirements. We demonstrated near-diffraction limit far-field coherent pattern with 19% PCE and 95% visibility. The far-field angle (full-width at half-maximum (FWHM)) of center lobe was measured as 1.5 diffraction angular limited with visibility of 99% for 5A injection current and 1.6 diffraction angular limited with visibility of 95% for 14A injection current. Power scaling of diode array is discussed.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Coherent beam combining of high power broad-area laser diode array with near diffraction limited beam quality and high power conversion efficiency

Liu¹,

Braiman²

2013

Opt. Express

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“…A very powerful tool is optical feedback, in many cases in conjunction with filtering techniques [6,[8][9][10][11][12][13]. Promising progress was achieved in controlling the emission of broadarea edge-emitting semiconductor lasers [11,[13][14][15][16][17][18][19]. Some of these works also witnessed interest in stabilizing other spatial distributions than the fundamental/homogeneous mode as long as the mode stability and thus the temporal coherence can be improved.…”

Section: Introductionmentioning

confidence: 99%

Vapor Pressure of Hf and Si Precursors for Hf_xSi_1-xO₂ Deposition Evaluated by a Saturated Gas Technique

Machida¹,

Kada²,

Ishikawa³

et al. 2004

Jpn. J. Appl. Phys.

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The wave number of transverse spatial structures in broad-area vertical-cavity surface-emitting lasers (VCSELs) is controlled via frequency-selective feedback from an external self-imaging cavity in a broad range of wave numbers and emission frequencies. The selected states follow the dispersion curves of the free-running laser. A control range of about 2.5 µm −1 in spatial frequency space and 2.5 nm in emission wavelength was obtained for square VCSELs and of about 3 µm −1 and 8 nm for circular VCSELs having a different dispersion curve. By spatial filtering in Fourier space, the shape of the structures can also be controlled to some extent. It is argued that the feedback techniques are useful to 'probe' emission states of the free-running laser.

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“…One possible approach to solving the above problem consists in the use of an external resonator in which the spectrally selective element can be based on an interference filter [2], a diffraction grating [3][4][5], etc. A simple and effective design of the external resonator is offered by a cavity with external grating that operates in the Littrow scheme, according to which a grating and an unbloomed output face of the LD form a spectrally selective laser cavity.…”

mentioning

confidence: 99%

10.1007/s11455-008-3003-5

2010

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The output radiation power of modern laser diodes (LDs) operating in the continuous-wave (CW) generation regime reaches 10 W and above [1], which makes them promising sources for nonlinear optical converters for the yellow-green spectral range. However, a significant disadvantage of high-power edgeemitting LDs with wide stripe contacts is the operation in a multimode and multifrequency regime, which is related to the uncontrolled generation of numerous longitudinal and transverse modes in the p − n junction plane and accounts for a relatively large width of the radiation spectrum (linewidth). At the same time, the spectral bandwidth of conversion in modern nonlinear crystals-for example, that based on periodically poled lithium niobate (PPLN)-does not exceed 0.3 nm. Therefore, it is an urgent task to create a high-power edge-emitting laser that possesses a narrow linewidth.One possible approach to solving the above problem consists in the use of an external resonator in which the spectrally selective element can be based on an interference filter [2], a diffraction grating [3-5], etc. A simple and effective design of the external resonator is offered by a cavity with external grating that operates in the Littrow scheme, according to which a grating and an unbloomed output face of the LD form a spectrally selective laser cavity. The angle of diffraction for the selected wavelength λ is equal to the angle β of radiation incidence on the grating (Fig. 1), so that where d is the grating period. λ 2d β, sin = Abstract -Use of an external cavity with a grating ensures effective narrowing of the linewidth (~0.35 nm) of a high-power multimode semiconductor laser with a broad (100 µ m) stripe contact. An output power of up to 550 mW has been reached with experimental external-grating-cavity laser diodes. It is demonstrated that a 3-mm-long multimode laser diode based on a quantum-dimensional AlGaAs/GaAs/InGaAs heterostructure ( λ = 1.06 µ m) can be used with a directly pumped PPLN crystal waveguide to obtain second-harmonic radiation with λ = 0.532 µ m. PACS numbers: 42.55.Px First diffraction order First diffraction order First diffraction order β β β β β β Cylindrical microlens Microobjective R ഛ 0.05 LD R = 0.95 L = 25 cm Diffraction grating (1/1200) Output beam, zero diffraction orderFig. 1. Schematic diagram of an external-cavity LD ( R is the coefficient of reflection).

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Tuning high-power laser diodes with as much as 038 W of power and M^2 = 12 over a range of 32 nm with 3-GHz bandwidth

Cited by 34 publications

References 9 publications

Coherent beam combining of high power broad-area laser diode array with near diffraction limited beam quality and high power conversion efficiency

Coherent beam combining of high power broad-area laser diode array with near diffraction limited beam quality and high power conversion efficiency

Vapor Pressure of Hf and Si Precursors for Hf_xSi_1-xO₂ Deposition Evaluated by a Saturated Gas Technique

10.1007/s11455-008-3003-5

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Tuning high-power laser diodes with as much as 038 W of power and M^2 = 12 over a range of 32 nm with 3-GHz bandwidth

Cited by 34 publications

References 9 publications

Coherent beam combining of high power broad-area laser diode array with near diffraction limited beam quality and high power conversion efficiency

Coherent beam combining of high power broad-area laser diode array with near diffraction limited beam quality and high power conversion efficiency

Vapor Pressure of Hf and Si Precursors for HfxSi1-xO2 Deposition Evaluated by a Saturated Gas Technique

10.1007/s11455-008-3003-5

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Vapor Pressure of Hf and Si Precursors for Hf_xSi_1-xO₂ Deposition Evaluated by a Saturated Gas Technique