Tuning electronic properties of 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>FeSe</mml:mi><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
 thin flakes using a solid ion conductor field-effect transistor

Zhu, Changan; Cui, Jianhua; Lei, Bin; Wang, N. Z.; Shang, Chao; Meng, Fanbao; K., L.; Luo, Xiaoguang; Wu, Tao; Sun, Zhao-Yan; Chen, X. H.

doi:10.1103/physrevb.95.174513

Cited by 24 publications

(12 citation statements)

References 33 publications

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“…However, people have recently recognized that the chemical reaction might help for the future application, such as chemical etching for thinning films 59,60 and electrochemical intercalation for heavily electron doping 9,11,34,38,50,51,52,53 and phase transformation 61,62,63 . A similar technique has been also adapted for solid ion conductor 51,52,53 and even photoactive EDLT has been developed 64 .…”

Section: Discussionmentioning

confidence: 99%

“…In the electrolyte gating (Figure 1c), ions are not only accumulated at the interface to form EDLT, but can be also intercalated into layers of two-dimensional materials via thermal diffusion without damaging sample under applying the large gate voltage, leading to the electrochemical doping 8,9,11,34,38,50,51,52,53 . Thus, we can drastically change the carrier number compared to the conventional field effect transistor using the solid gate.…”

Section: Introductionmentioning

confidence: 99%

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Electric-field Control of Electronic States in WS<sub>2</sub> Nanodevices by Electrolyte Gating

Qin

Ideue

Shi

et al. 2018

JoVE

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A method of carrier number control by electrolyte gating is demonstrated. We have obtained WS2 thin flakes with atomically flat surface via scotch tape method or individual WS2 nanotubes by dispersing the suspension of WS2 nanotubes. The selected samples have been fabricated into devices by the use of the electron beam lithography and electrolyte is put on the devices. We have characterized the electronic properties of the devices under applying the gate voltage. In the small gate voltage region, ions in the electrolyte are accumulated on the surface of the samples which leads to the large electric potential drop and resultant electrostatic carrier doping at the interface. Ambipolar transfer curve has been observed in this electrostatic doping region. When the gate voltage is further increased, we met another drastic increase of source-drain current which implies that ions are intercalated into layers of WS2 and electrochemical carrier doping is realized. In such electrochemical doping region, superconductivity has been observed. The focused technique provides a powerful strategy for achieving the electric-filed-induced quantum phase transition.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electric-field Control of Electronic States in WS<sub>2</sub> Nanodevices by Electrolyte Gating

Qin

Ideue

Shi

et al. 2018

JoVE

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“…However, these techniques could only tune the carrier density for thin flakes and the tuning depth is restricted to a few nanometers beneath the surface due to the Thomas-Fermi screening [11]. Recently, using solid ion conductor (SIC) as the gate dielectric, we have developed a new type of FET device, namely SIC-FET [12][13][14]. Using the lithium ion conductive glass ceramics as the gate dielectric, Li ions can be driven into FeSe thin flakes, and enhance the Tc=8 K in pristine FeSe to a maximum of 46 K. In addition, a new structural transition induces LixFe2Se2 crystalline phase out of the pristine FeSe phase, which is stabilized by electric field and not accessible by conventional methods [12].…”

Section: Main Textmentioning

confidence: 99%

Electric-field-controlled superconductor–ferromagnetic insulator transition

Lei

Wang

et al. 2019

Science Bulletin

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How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric.By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped superconducting region with optimal Tc ~ 43 K, which is separated by a quantum critical point from ferromagnetically insulating phase. The ferromagnetism arises from the long range order of the interstitial Fe ions expelled from the (Li,Fe)OH layers by Li injection. The device can reversibly manipulate collectively ordered electronic states and stabilize new metastable structures by electric field.

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“…We have shown however [19,20] that, even in thin films of noble metals, a measurable modulation of the resistivity (up to 10% at low temperature) can be induced by ionic gating. This was followed by reports on the successful modulation of the superconducting properties of standard BCS superconductors [21][22][23], metallic transition-metal dichalcogenides [24][25][26] and iron-based compounds [27][28][29].…”

Section: Introductionmentioning

confidence: 99%

Anomalous screening of an electrostatic field at the surface of niobium nitride

Piatti

Romanin

2018

Applied Surface Science

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The interaction between an electric field and the electric charges in a material is described by electrostatic screening, which in metallic systems is commonly thought to be confined within a distance of the order of the Thomas-Fermi length. The validity of this picture, which holds for surface charges up to ∼ 10 13 cm −2 , has been recently questioned by several experimental results when dealing with larger surface charges, such as those routinely achieved via the ionic gating technique. Whether these results can be accounted for in a purely electrostatic picture is still debated. In this work, we tackle this issue by calculating the spatial dependence of the charge carrier density in thin slabs of niobium nitride via an ab initio density functional theory approach in the field-effect transistor configuration. We find that perturbations induced by surface charges 10 14 cm −2 are mainly screened within the first layer, while those induced by larger surface charges ∼ 10 15 cm −2 can penetrate over multiple atomic layers, in reasonable agreement with the available experimental data. Furthermore, we show that a significant contribution to the screening of large fields is associated not only to the accumulation layer of the induced charge carriers at the surface, but also to the polarization of the pre-existing charge density of the undoped system.

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Tuning electronic properties of FeSe0.5Te0.5 thin flakes using a solid ion conductor field-effect transistor

Cited by 24 publications

References 33 publications

Electric-field Control of Electronic States in WS<sub>2</sub> Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS<sub>2</sub> Nanodevices by Electrolyte Gating

Electric-field-controlled superconductor–ferromagnetic insulator transition

Anomalous screening of an electrostatic field at the surface of niobium nitride

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