Tuning electronic, magnetic and optical properties of germanene nanosheet with site dependent adatoms arsenic and gallium: A first principles study

Transition metal-decorated germanene for NO, N2 and O2 sensing: A DFT study

“…In this context, it is important to study chemical modifications of germanene, by doping or decorating atoms, for new potential applications. The effects of substitutional dopant atoms like B, Al, Ga, N, As and defects in the physical properties and gas sensitivity of germanene have been investigated [9,[37][38][39][40][41]. Likewise, theoretical studies have shown that transition metal (TM) atoms can improve the chemical reactivity between molecules and surfaces of nanostructures [42].…”

Graphene-like emerging 2D materials: recent progress, challenges and future outlook

“…As a result, they can be naturally favored as n (As) and p (Ga) type doping components in germanene networks. This research 79 has shown that, by selecting suitable doping elements, doping concentrations as well as doping sites, semimetallic germanene may be converted to semiconducting or metallic nature. Be-doped graphene will operate like a semiconductor with an indirect bandgap of ∼0.30 eV, according to the prediction of López-Urías et al 80 The electrical and optical characteristics of the Be-doped germanene system at various concentrations were investigated by Dhar and Jana 81 in response to this aspiration.…”

Investigating the potential of Germanene in solar cells: A simulation study on a-SiGe/c-Si structure

“…For instance, impurity doping (groups III and V elements of the periodic table) affects the electronic properties of this nanoribbon. Based on the results, dopant causes alterations in the electric properties of germanene per the type of its atoms and concentration, along with its replacement instead of germanium atoms in the structure of germanene nanoribbon [12][13][14][15]. Therefore, doping turns that nanoribbon into the n-type and p-type semiconductors usable in solar cell structures.…”