2021
DOI: 10.1016/j.susc.2021.121849
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Tuning electronic and optical properties of bismuth monolayers by molecular adsorption

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Cited by 3 publications
(4 citation statements)
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“…As a matter of comparison, in bismuthene, a band gap of 0.8 eV is observed in bulk bismuthene . The DFT-GGA calculated value is 0.45 eV, whereas the computed value of the band gap with GW is around 1.0 eV . Therefore, we can conclude that GW provides a more realistic value for the CBM-VBM energy difference.…”
Section: Resultsmentioning
confidence: 77%
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“…As a matter of comparison, in bismuthene, a band gap of 0.8 eV is observed in bulk bismuthene . The DFT-GGA calculated value is 0.45 eV, whereas the computed value of the band gap with GW is around 1.0 eV . Therefore, we can conclude that GW provides a more realistic value for the CBM-VBM energy difference.…”
Section: Resultsmentioning
confidence: 77%
“…This is similar to what has been reported in H and CH 3 adsorbed on bismuthene using GGA calculations. 3,4,21 One can see that most p x and p y orbitals belonging to bismuth contribute to states close to the Fermi level. The CBM contains both p x and p y characters of the bismuth and the ligand.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…Hybrid stanene structures have a similar behavior to hybrid germanene where a small buckling is also reported. [38][39][40][41] This is rather different from what has been found for similar organic ligands on group-V nanostructures which become planar upon adsorption. [36,42] As a consequence, both the intralayer lattice parameter a and SnÀSn distance are slightly dependent on the ligand type.…”
Section: Structural Propertiesmentioning
confidence: 83%