Tuning Dirac states by strain in the topological insulator Bi2Se3

Liu, Y.; Li, Y. Y.; Rajput, Swati; Gilks, D.; Lari, Leonardo; Galindo, Pedro L.; Weinert, M.; Lazarov, Vlado K.; Li, L.

doi:10.1038/nphys2898

Cited by 231 publications

(222 citation statements)

References 29 publications

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“…Cleaving induces strain in the surface, which might then alter the surface atomic structure and the TSS. For example, mechanical strain in TI's was predicted by DFT to affect the electronic properties by changing the Г point band gap [32], which was later verified experimentally using the strain existing at the surface grain boundaries of a Bi 2 Se 3 film [33,34].…”

Section: Discussionmentioning

confidence: 99%

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

2016

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Bismuth Selenide (Bi 2 Se 3 ) is a topological insulator with a two-dimensional layered structure that enables clean and well-ordered surfaces to be prepared by cleaving. Although some studies have demonstrated that the cleaved surface is terminated with Se, as expected from the bulk crystal structure, other reports have indicated either a Bi-or mixed-termination. Low energy ion scattering (LEIS), low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS) are used here to compare surfaces prepared by ex situ cleaving, in situ cleaving, and ion bombardment and annealing (IBA) in ultra-high vacuum (UHV). Surfaces prepared by in situ cleaving and IBA are well ordered and Se-terminated. Ex situ cleaved samples could be either Se-terminated or Bi-rich, are less well ordered and have adsorbed contaminants. This suggests that a chemical reaction involving atmospheric contaminants, which may preferentially adsorb at surface defects, could contribute to the non-reproducibility of the termination. ____________

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Section: Discussionmentioning

confidence: 99%

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

2016

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“…We measured the heat capacity of BM, S-MS and Te-MS materials for the calculation of thermal conductivity and used the reference data for Ingot material (124.6 J mol (38). Figure S20 shows …”

Section: S11 Heat Capacity (C P ) Of Bi 05 Sb 15 Te 3 Samplesmentioning

confidence: 99%

Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Kim

Lee

Mun

et al. 2015

Science

1,687

1,094

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The widespread use of thermoelectric technology is constrained by a relatively low conversion efficiency of the bulk alloys, which is evaluated in terms of a dimensionless figure of merit (zT). ThezTof bulk alloys can be improved by reducing lattice thermal conductivity through grain boundary and point-defect scattering, which target low- and high-frequency phonons. Dense dislocation arrays formed at low-energy grain boundaries by liquid-phase compaction in Bi0.5Sb1.5Te3(bismuth antimony telluride) effectively scatter midfrequency phonons, leading to a substantially lower lattice thermal conductivity. Full-spectrum phonon scattering with minimal charge-carrier scattering dramatically improved thezTto 1.86 ± 0.15 at 320 kelvin (K). Further, a thermoelectric cooler confirmed the performance with a maximum temperature difference of 81 K, which is much higher than current commercial Peltier cooling devices.

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“…Generally speaking, the TI boundary states have a rather wide range of tunability of the electronic properties under various perturbations, such as structural distortions [10,11] and mechanical strains [12,13], adsorption of (magnetic and nonmagnetic) atoms and molecules on the surface [14][15][16][17], an alternation of the surface termination [18,19], engineering via capping layers and interfaces with other materials [20][21][22][23], applying an external gate voltage [20,24,25], etc., some of which are accompanied by electrostatic bending of actual bands in TIs. We only briefly annotate the interesting consequences of these perturbations for the states confined at the TI boundary (of course, our literature survey is not exhaustive).…”

Section: Introductionmentioning

confidence: 99%

Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

et al. 2015

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In the frame of k · p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically describe the formation of interfacial bound electron states of two types (ordinary and topological) having different spatial distributions and energy spectra. We show that these states appear as a result of the interplay of two factors: hybridization and band bending of the TI and NI electron states near the TI/NI boundary. These results are corroborated by the density functional theory calculations for the exemplar Bi 2 Se 3 /ZnSe system.

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Tuning Dirac states by strain in the topological insulator Bi2Se3

Cited by 231 publications

References 29 publications

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

Termination of single-crystal Bi2Se3 surfaces prepared by various methods

Dense dislocation arrays embedded in grain boundaries for high-performance bulk thermoelectrics

Band bending driven evolution of the bound electron states at the interface between a three-dimensional topological insulator and a three-dimensional normal insulator

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