Tungsten doped indium oxide film: Ready for bifacial copper metallization of silicon heterojunction solar cell

Yu, Jian; Bian, Jinhu; Duan, Weiyuan; Liu, Yucheng; Shi, Jing; Meng, Fanying; Liu, Zhengxin

doi:10.1016/j.solmat.2015.09.033

Cited by 47 publications

(35 citation statements)

References 16 publications

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“…Due to a lower required Ne, optical losses in the infrared (IR) due to free carrier effects are reduced. In recent years, new In2O3-based TCOs with a higher carrier mobility of >50 cm 2 /Vs have gained significant interest, examples include Zn-doped indium oxide (IZO) 2 , W-doped indium oxide (IWO) 3 , Modoped indium oxide (IMO) 4 and H-doped indium oxide (In2O3:H, also referred to as IO:H or IOH) [5][6][7] . Due to the greatly-reduced IR-losses in such TCOs, they have found direct application in various solar cell devices, mainly leading to increased short-circuit current densities Jsc when compared to conventional ITO.…”

Section: Introductionmentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. ABSTRACTHydrogen-doped indium oxide (In2O3:H) has emerged as a highly transparent and conductive oxide, finding its application in a multitude of optoelectronic devices. Recently, we have reported on an atomic layer deposition (ALD) process to prepare high quality In2O3:H. This process consists of ALD of In2O3:H films at 100 o C, followed by a solid phase crystallization step at 150-200 o C. In this work, we report on a detailed electron microscopy study of this crystallization process which reveals new insights into the crucial aspects for achieving the large grain size and associated excellent properties of the material. The key finding is that the best optoelectronic properties are obtained by preparing the films at the lowest possible temperature prior to post-deposition annealing. Electron microscopy imaging shows that such films are mostly amorphous, but feature a very low density of embedded crystallites. Upon post-deposition annealing, crystallization proceeds merely from isotropic crystal grain growth of these embedded crystallites rather than by the formation of additional crystallites. The

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Section: Introductionmentioning

confidence: 99%

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Macco

Verheijen

Black

et al. 2016

Journal of Applied Physics

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“…The k value is undetectable over the wavelength range from 500 to 1200 nm, indicating low free‐carrier absorption. Indeed, Hall‐effect measurements reveal that the resistivity of the ZnO film is as high as 737 Ω cm and the carrier concentration is only 4.3 × 10 16 cm −3 , much lower than the usual conductive films . These results indicate that when applying ZnO as an ETL at the rear side of solar cells, light absorption within this film can effectively be neglected.…”

Section: Resultsmentioning

confidence: 92%

Mitigating Plasmonic Absorption Losses at Rear Electrodes in High‐Efficiency Silicon Solar Cells Using Dopant‐Free Contact Stacks

Zhong

Dréon

Jeangros

et al. 2019

Adv Funct Materials

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Although charge-carrier selectivity in conventional crystalline silicon (c-Si) solar cells is usually realized by doping Si, the presence of dopants imposes inherent performance limitations due to parasitic absorption and carrier recombination. The development of alternative carrier-selective contacts, using non-Si electron and hole transport layers, has the potential to overcome such drawbacks and simultaneously reduce the cost and/or simplify the fabrication process of c-Si solar cells. Nevertheless, devices relying on such non-Si contacts with power conversion efficiencies (PCEs) that rival their classical counterparts are yet to be demonstrated. In this study, one key element is brought forward toward this demonstration by incorporating low-pressure chemical vapor deposited ZnO as the electron transport layer in c-Si solar cells. Placed at the rear of the device, it is found that rather thick (75 nm) ZnO film capped with LiF x /Al simultaneously enables efficient electron selectivity and suppression of parasitic infrared absorption. Next, these electron-selective contacts are integrated in c-Si solar cells with MoO x -based hole-collecting contacts at the device front to realize full-area dopant-freecontact solar cells. In the proof-of-concept device, a PCE as high as 21.4% is demonstrated, which is a record for this novel device class and is at the level of conventional industrial solar cells.

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“…During the ion plating process, the ionized W 6+ or W 4+ ions easily substitute the In 3+ sites in the In 2 O 3 matrix and produce excess electrons in the IWO films. In addition, the screening effect of the W dopant reduced the scattering of electrons and increased the carrier mobility, as experienced in high mobility transparent conducting oxides 22,34–44 . As suggested by Zhang et al ., high mobility of the In 2 O 3 -based transparent conducting oxide film could be explained by high Lewis acid strength (LAS) of transition metal dopants such as Ti 4+ , Zr 4+ , Gd 3+ , Mo 6+ , and W 6+ 45,46 .…”

Section: Resultsmentioning

confidence: 99%

Room temperature processed high mobility W-doped In2O3 electrodes coated via in-line arc plasma ion plating for flexible OLEDs and quantum dots LEDs

Kim

Lee

et al. 2018

Sci Rep

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We fabricated W-doped In2O3 (IWO) films at room temperature on a flexible PET substrate using an in-line arc plasma ion plating system for application as flexible transparent conducting electrodes (FTCEs) in flexible organic light emitting diodes (OLEDs) and quantum dots light emitting diodes (QDLEDs). Due to the high-energy flux of the sublimated ions generated from the plasma region, the IWO films showed a well-developed crystalline structure with a low sheet resistance of 36.39 Ohm/square and an optical transmittance of 94.6% even though they were prepared at room temperature. The low sheet resistance of the IWO film processed at room temperature is attributed to the high mobility (59 cm2/V-s) in the well-developed crystalline structure of the ion-plated IWO film and screening effect of W dopants. In addition, the better adhesion of the ion-plated IWO film on the PET substrate led to small critical outer and inner bending radii of 6 and 3 mm, respectively, against substrate bending. Due to the low sheet resistance, high optical transmittance, better crystallinity, better adhesion, and outstanding flexibility of the ion-plated IWO films, the flexible OLEDs and QDLEDs with the IWO electrodes showed better performances than flexible OLEDs and QDLEDs with sputtered flexible ITO anodes. This indicates that in-line arc plasma ion plating is a promising large area coating technique to realize room temperature processed high-quality FTCEs for flexible OLEDs and QDLEDs.

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Tungsten doped indium oxide film: Ready for bifacial copper metallization of silicon heterojunction solar cell

Cited by 47 publications

References 16 publications

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

On the solid phase crystallization of In2O3:H transparent conductive oxide films prepared by atomic layer deposition

Mitigating Plasmonic Absorption Losses at Rear Electrodes in High‐Efficiency Silicon Solar Cells Using Dopant‐Free Contact Stacks

Room temperature processed high mobility W-doped In2O3 electrodes coated via in-line arc plasma ion plating for flexible OLEDs and quantum dots LEDs

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