Tungsten atomic layer deposition on polymers

Wilson, Christopher A.; McCormick, Jarod A.; Cavanagh, Andrew S.; Goldstein, David N.; Weimer, Alan W.; George, Steven M.

doi:10.1016/j.tsf.2007.11.086

Cited by 67 publications

(58 citation statements)

References 40 publications

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“…Al 2 O 3 ALD can be deposited at the low temperatures required for coating polymers. The Al 2 O 3 ALD films are amorphous and extremely conformal to the underlying substrate [31].…”

Section: B Reaction Mechanismmentioning

confidence: 99%

A Review of Atomic Layer Deposition for Nanoscale Devices

Riyanto

Rijanto

Prawara

2012

J. Mechatron. Electr. Power Veh. Technol.

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Atomic layer deposition (ALD) is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM), and microelectromechanic system (MEMS). By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.Key words: thin coating, atomic layer deposition, nanoscale devices. Abstrak Atomic layer deposition (ALD) adalah teknik penumbuhan lapisan tipis yang menggunakan reaksi kimia jenuh antara gas pendahulu untuk mendapatkan deposisi lapisan skala nano. Teknik ini menjadi subyek yang sangat menarik saat ini untuk deposisi lapisan sangat tipis pada berbagai aplikasi seperti mikroelektronik, photovoltaic, dynamic random access memory (DRAM) dan sistem mikroelektromekanik (MEMS

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“…Al 2 O 3 ALD can be deposited at the low temperatures required for coating polymers. The Al 2 O 3 ALD films are amorphous and extremely conformal to the underlying substrate [31].…”

Section: B Reaction Mechanismmentioning

confidence: 99%

A Review of Atomic Layer Deposition for Nanoscale Devices

Riyanto

Rijanto

Prawara

2012

J. Mechatron. Electr. Power Veh. Technol.

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“…George et al 12. 13 proposed physical infiltration of TMA and H 2 O precursors, resulting in the growth of Al 2 O 3 within the organic polymer matrix. Recently, Lee et al 14.…”

Section: Xps Al Atomic % Obtained For Six Different Rcs On Reference mentioning

confidence: 99%

“…[10,11] The details of the interactions of ALD precursors, for instance, TMA and water vapor, with polymers are poorly understood. George et al [12,13] proposed physical infiltration of TMA and H 2 O precursors, resulting in the growth of Al 2 O 3 within the organic polymer matrix. Recently, Lee et al [14] proposed a possible chemical interaction during infiltration of TMA and H 2 O in the amorphous regions of the polymer, resulting in chemical bonds with the polymer chains.…”

mentioning

confidence: 99%

Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition

Puttaswamy

Haugshøj

Christensen

et al. 2010

Chemistry A European J

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“…W films on polymers may be useful for electromagnetic or radiation shielding of polymer-packaged devices [5,6]. It may also be useful to provide polymers with enhanced mechanical, with diffusion barrier and with optical properties ( [7] and references therein). Such films are typically produced by CVD or ALD from tungsten halides, most often tungsten hexafluoride, WF 6 and a suitable reducing agent, e.g.…”

Section: Introductionmentioning

confidence: 99%

“…Such films are typically produced by CVD or ALD from tungsten halides, most often tungsten hexafluoride, WF 6 and a suitable reducing agent, e.g. H 2 or silane [1,7]. Despite the robustness of such processes, exposure of the substrates and of the deposition equipment to corrosive reaction byproducts, are significant disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Thermal decomposition of tungsten hexacarbonyl: CVD of W‐containing films under Pd codeposition and VUV assistance

Krisyuk

Koretskaya

Turgambaeva

et al. 2015

Phys. Status Solidi C

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Experiments on chemical vapor deposition of W(CO)6‐derived films on silicon substrates were carried out at total pressure of 5‐10 Torr within the temperature range of 250‐350 °C; in Ar or H2 flow. Metallic, carbide and oxide phases composed the obtained films. Deposition in presence of hydrogen results in the increase of the metal content in the film. Sublimed palladium hexafluoracetylacetonate Pd(hfa)2 was used for Pd catalytic promotion of the deposition process. Codeposition with Pd(hfa)2 in hydrogen increases W‐metal fraction and oxygen content while the Pd content is up to 10 at.%. Influence of vacuum ultraviolet (VUV) radiation from Xe excimer lamp (λ ∼172 nm) on the quality of the obtained films was investigated. It was found that VUV irradiation can reduce the oxygen‐content in the film while W‐metal fraction slightly increases. In all films, oxygen was in the form of WO3 and carbon was mainly incorporated as a graphite metastable phase. The influence of other chemical additives is discussed. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Tungsten atomic layer deposition on polymers

Cited by 67 publications

References 40 publications

A Review of Atomic Layer Deposition for Nanoscale Devices

A Review of Atomic Layer Deposition for Nanoscale Devices

Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition

Thermal decomposition of tungsten hexacarbonyl: CVD of W‐containing films under Pd codeposition and VUV assistance

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