Tuneable Q-Factor of MEMS Cantilevers with Integrated Piezoelectric Thin Films

Fischeneder, M.; Oposich, Martin; Schneider, Michael; Schmid, U.

doi:10.3390/proceedings1040380

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…For the measurement of the resonance frequencies of the double clamped beams, we used a typical experimental setup [ 21 , 22 , 23 ], as shown in Figure 3 .…”

Section: Methodsmentioning

confidence: 99%

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

et al. 2021

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3C-SiC is an emerging material for MEMS systems thanks to its outstanding mechanical properties (high Young’s modulus and low density) that allow the device to be operated for a given geometry at higher frequency. The mechanical properties of this material depend strongly on the material quality, the defect density, and the stress. For this reason, the use of SiC in Si-based microelectromechanical system (MEMS) fabrication techniques has been very limited. In this work, the complete characterization of Young’s modulus and residual stress of monocrystalline 3C-SiC layers with different doping types grown on <100> and <111> oriented silicon substrates is reported, using a combination of resonance frequency of double clamped beams and strain gauge. In this way, both the residual stress and the residual strain can be measured independently, and Young’s modulus can be obtained by Hooke’s law. From these measurements, it has been observed that Young’s modulus depends on the thickness of the layer, the orientation, the doping, and the stress. Very good values of Young’s modulus were obtained in this work, even for very thin layers (thinner than 1 mm), and this can give the opportunity to realize very sensitive strain sensors.

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“…For the measurement of the resonance frequencies of the double clamped beams, we used a typical experimental setup [ 21 , 22 , 23 ], as shown in Figure 3 .…”

Section: Methodsmentioning

confidence: 99%

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

et al. 2021

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Tuneable Q-Factor of MEMS Cantilevers with Integrated Piezoelectric Thin Films

Fischeneder

Oposich

Schneider

et al. 2018

Sensors

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In atomic force microscopes (AFM) a resonantly excited, micro-machined cantilever with a tip is used for sensing surface-related properties. When targeting the integration of AFMs into vacuum environments (e.g., for enhancing the performance of scanning electron microscopes), a tuneable Q-factor of the resonating AFM cantilever is a key feature to enable high speed measurements with high local resolution. To achieve this goal, in this study an additional mechanical stimulus is applied to the cantilever with respect to the stimulus provided by the macroscopic piezoelectric actuator. This additional stimulus is generated by an aluminum nitride piezoelectric thin film actuator integrated on the cantilever, which is driven by a phase shifted excitation. The Q-factor is determined electrically by the piezoelectric layer in a Wheatstone bridge configuration and optically verified in parallel with a laser Doppler vibrometer. Depending on the measurement technique, the Q-factor is reduced by a factor of about 1.9 (electrically) and 1.6 (optically), thus enabling the damping of MEMS structures with a straight-forward and cheap electronic approach.

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Tuneable Q-Factor of MEMS Cantilevers with Integrated Piezoelectric Thin Films

Cited by 2 publications

References 14 publications

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

Measurement of Residual Stress and Young’s Modulus on Micromachined Monocrystalline 3C-SiC Layers Grown on <111> and <100> Silicon

Tuneable Q-Factor of MEMS Cantilevers with Integrated Piezoelectric Thin Films

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