Tuneable four-wave mixing in AlGaAs nanowires

Dolgaleva, Ksenia; Sarrafi, Peyman; Kultavewuti, Pisek; Awan, Kashif M.; Feher, Norbert; Aitchison, J. S.; Qian, Li; Volatier, M.; Arès, Richard; Aimez, Vincent

doi:10.1364/oe.23.022477

Cited by 27 publications

(31 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Here, the maximum conversion efficiency of around −50 dB was achieved. As a comparison, the value of −38 dB has been reported for AlGaAs nanowires [27] with engineered dispersion, ultracompact mode with A eff < 1 µm 2 , and managed TPA.…”

Section: Four-wave Mixingmentioning

confidence: 91%

“…Our InGaAsP/InP strip-loaded waveguides were designed specifically in a way to maximize optical nonlinearity while keeping the propagation loss relatively low [18]. On the other hand, a waveguide structure fully optimized for efficient nonlinear optical interactions would require dispersion management [26,27] (see [18] for the corresponding designs in InGaAsP). Such dispersion-managed III-V semiconductor waveguides, frequently termed "nanowires" due to their superior compactness, require deep etching which makes fabrication of such structures a more challenging task.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides

et al. 2018

Self Cite

View full text Add to dashboard Cite

We report on the study of the third-order nonlinear optical interactions in In x Ga 1−x As y P 1−y /InP striploaded waveguides. The material composition and waveguide structures were optimized for enhanced nonlinear optical interactions. We performed self-phase modulation, four-wave mixing and nonlinear absorption measurements at the pump wavelength 1568 nm in our waveguides. The nonlinear phase shift of up to 2.5π has been observed in self-phase modulation experiments. The measured value of the two-photon absorption coefficient α 2 was 15 cm/GW. The four-wave mixing conversion range, representing the wavelength difference between maximally separated signal and idler spectral components, was observed to be 45 nm. Our results indicate that InGaAsP has a high potential as a material platform for nonlinear photonic devices, provided that the operation wavelength range outside the two-photon absorption window is selected.

show abstract

Section: Four-wave Mixingmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Demonstration of optical nonlinearity in InGaAsP/InP passive waveguides

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

“…Similar to other III-V semiconductor platforms [6][7][8], high-optical-quality GaN is also expected to become a suitable candidate for integrated nonlinear photonic circuits for a wide range of applications spanning from all-optical signal processing to quantum computing. Integrated nonlinear optical waveguides based on GaN can exhibit correlated photon pair generation through spontaneous nonlinear optical processes, thus representing potentials for on-chip quantum sources in the visible and telecommunication spectral ranges.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and optical characterization of GaN waveguides on (−201)-oriented β-Ga_2O_3

Awan

Muhammad

Sivan

et al. 2017

Opt. Mater. Express

Self Cite

View full text Add to dashboard Cite

KAUST RepositoryAbstract: Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with a bandgap wavelength λ g = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has a large number of applications for photonics and optoelectronics. However, the optical quality of this material suffers from growth imperfections due to the lack of a suitable substrate. Recent studies have shown that GaN grown on (-201) β − Ga 2 O 3 (gallium oxide) has better lattice matching and hence superior optical quality as compared to GaN grown traditionally on Al 2 O 3 (sapphire). In this work, we report on the fabrication of GaN waveguides on Ga 2 O 3 substrate, followed by a wet-etch process aimed at the reduction of waveguide surface roughness and improvement of side-wall verticality in these waveguides. The propagation loss in the resulting waveguides has been experimentally determined to be 7.5 dB/cm.

show abstract

“…The design was optimized for a better mode confinement that would allow for enhanced nonlinear optical interactions [4]. GaN was epitaxially grown on (-201) -Ga 2 O 3 , and commercially available high quality GaN on Al 2 O 3 was purchased for comparative studies.…”

mentioning

confidence: 99%