Tunable-white-light-emitting nanowire sources

Seo, Kyung Wook; Lim, Taekyung; Kim, Sangdan; Park, Hong-Lee; Ju, Sanghyun

doi:10.1088/0957-4484/21/25/255201

Cited by 22 publications

(16 citation statements)

References 50 publications

(49 reference statements)

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“…In general, there are two reasonable approaches developed to realize the white light source. They are the synthesis of semiconductor alloy nanostructures with widely tunable band gaps, and the construction of a white lighting emitter with various single band gap semiconductors that have monochromatic luminescence with high quantum efficiency . However, white light generated from red–green–blue emitters based on semiconductor nanostructures has been known as the major challenge in the solid‐state lighting community .…”

Section: Introductionmentioning

confidence: 99%

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX₃, X = Cl, Br, I) Microstructures

Guo

Hossain

Shen

et al. 2017

Advanced Optical Materials

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Wavelength‐tunable nano/microlasers are essential components for various highly integrated and multifunctional photonic devices. Based on the different band gap/composition of inorganic cesium lead halide perovskite materials, broad band light absorption and emission devices can be achieved. Herein, a vapor–liquid–solid route for growing cesium lead halide perovskite (CsPbX3, X = Cl, Br, I) microcrystal structures is demonstrated. These square‐shaped microstructures exhibit strong blue, green, and red photoluminescence, indicating that their band gaps can be engineered to cover the entire visible range. Optically pumped red–green–blue whispering‐gallery mode lasers based on the controlled composition of these microcrystals are successfully realized at room temperature. Moreover, rationally designed white‐light‐emitting chips with high brightness are fabricated utilizing these metal halide perovskite microstructures grown on sapphire. All these results evidently suggest a feasible route to the design of red–green–blue lasers and white‐light emitters for potential applications in full‐color displays as well as photonic devices.

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Section: Introductionmentioning

confidence: 99%

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX₃, X = Cl, Br, I) Microstructures

Guo

Hossain

Shen

et al. 2017

Advanced Optical Materials

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“…15 The average diameter and length of the NWs was $ 40 nm and $ 10 mm, respectively. The inset of Fig.…”

Section: Methodsmentioning

confidence: 99%

Surface Modification of Oxide Nanowires by Nitrogen Plasma

Lim

Lee

Suh

et al. 2011

Electrochem. Solid-State Lett.

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The amount of oxygen vacancies on the surface of SnO 2 nanowires was controlled by N 2 plasma. Nitrogen ions in N 2 plasma were substituted for oxygen vacancies (V o ) on the nanowire surface, reducing the amount of oxygen vacancies. Photoluminescence spectra showed that the V o -related peak around 600 nm decreased dramatically after N 2 plasma and increased again after ultravioletozone (UVO) treatment. The threshold voltage (V th ) of the SnO 2 nanowire transistors exhibited a þ1.8 V positive shift after N 2 plasma, and the V th of the N 2 plasma-treated nanowire transistors shifted toward the negative direction (À0.76 V) again after UVO.Oxide nanowires are applied in various fields including nanoscale electronics, next-generation displays, photovoltaic devices, and gas/solar sensors due to their outstanding characteristics such as wide-energy band gaps, nano-scale integration, optical transparency, mechanical flexibility, low voltage operation, and high mobility. [1][2][3][4] Most notably, studies are currently focusing on oxide nanowires applied to commercial electronic circuits and, in particular, integrated transistor circuits. 5-7 For such applications, it is crucial to effectively control the transistor characteristics of the oxide nanowires to meet required specifications of integrated transistor circuits. Therefore, nanowire characteristics should be controlled and monitored continuously through a device optimization process. In related studies, various methods, such as optimizing the growth conditions of nanowires, doping nanowires with various materials, and controlling characteristics through post-treatments after producing nanowire devices, are being applied. 8-10 Among these methods, post-treatments are relatively simple, easy to control, and ensure reproducibility. Various attempts have recently been made to control characteristics through post-treatment of the nanowire surface using thermal annealing, H 2 , O 2 , Ar plasma, and ozone treatment. In an oxygen atmosphere, the field emission of ZnO was enhanced through thermal annealing. 11 ZnO nanowire treated by Ar or H 2 plasma showed improved conductivity. 12,13 In addition, surface treatment using ultraviolet (UV) radiation enabled temporary interface treatment. 14 However, these attempts were only applied to the observation of nanowire properties after the posttreatment, not to the fine control of the characteristics of nanowire devices.In this study, N 2 plasma was used to control the characteristics of SnO 2 nanowire transistors (NWTs) by controlling the characteristics of the SnO 2 nanowire surface. The amount of oxygen vacancies (V o ), which act as current paths in semiconducting oxide nanowires, were determined during the initial growth stage of crystal formation; this stage determines the threshold voltage (V th ), subthreshold slope (SS), and mobility characteristics of oxide NWTs. But, N 2 plasma successfully controlled transistor characteristics of NWT devices, including V th , by controlling V o on the surface of oxide nanowires afte...

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“…1,[5][6][7] Moreover, since nanowires, which are one-dimensional single-crystal materials, can be effectively integrated into a nanoscale device, the possibilities of using them for the operation of nanointegrated circuits and displays are increasing. [8][9][10] Substituting graphene thin films for conventional metal thin films such as indium tin oxide (ITO), Au, and Al may lead to higher transparency and potential application to flexible and stretchable devices that incorporate nanowire transistors. Moreover, because graphene grown on a separate substrate can be transferred at room temperature, the processing temperature of device fabrication can be dramatically reduced.…”

mentioning

confidence: 99%

Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate–Source–Drain Electrodes

Bong

Han

Lee

et al. 2013

Appl. Phys. Express

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We report the fabrication of a highly transparent nanowire transistor using graphene as the gate and source-drain electrodes. Graphene gatesource-drain electrodes were simultaneously formed by a single-step transfer process. The graphene electrode and the nanowire channel exhibited near-ohmic contact characteristics. The threshold voltage, subthreshold slope, and mobility of the fabricated top-gate-structural In 2 O 3 nanowire transistor with graphene gate-source-drain electrodes were À4:54 V, 0.43 V/dec, and 78 cm 2 /(VÁs) respectively. The optical transmissions in the region that contained nanowire transistors on the quartz substrate were 88.5-90.3% in the 400-780 nm wavelength range.

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Tunable-white-light-emitting nanowire sources

Cited by 22 publications

References 50 publications

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX₃, X = Cl, Br, I) Microstructures

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX₃, X = Cl, Br, I) Microstructures

Surface Modification of Oxide Nanowires by Nitrogen Plasma

Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate–Source–Drain Electrodes

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Tunable-white-light-emitting nanowire sources

Cited by 22 publications

References 50 publications

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX3, X = Cl, Br, I) Microstructures

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX3, X = Cl, Br, I) Microstructures

Surface Modification of Oxide Nanowires by Nitrogen Plasma

Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate–Source–Drain Electrodes

Contact Info

Product

Resources

About

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX₃, X = Cl, Br, I) Microstructures

Room‐Temperature Red–Green–Blue Whispering‐Gallery Mode Lasing and White‐Light Emission from Cesium Lead Halide Perovskite (CsPbX₃, X = Cl, Br, I) Microstructures