Tunable Vernier Series-Coupled Microring Resonator Filters Based on InGaAs/InAlAs Multiple Quantum-Well Waveguide

Peng, Zhifeng; Arakawa, Taro

doi:10.3390/photonics10111256

Cited by 4 publications

(3 citation statements)

References 30 publications

(44 reference statements)

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“…InGaAs quantum wells (QWs) epitaxially grown on InP are an excellent optoelectronic material, which can be used to manufacture infrared photodetectors, lasers, high-speed transistors, and other optoelectronic devices widely used in optical communications, medical devices, and LiDAR [1][2][3][4][5]. In addition, with the development of THz technology, THz photoconductive antenna (PCA) prepared with low-temperature-grown InGaAs can be applied in the fields of security detection, material analysis, and medical imaging [6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °C, which can lead to disorder scattering, dopant diffusion, and interface roughening, adversely affecting device performance. Lower growth temperatures enable the fabrication of high-speed optoelectronic devices by increasing arsenic antisite defects and reducing carrier lifetimes. This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200–250 °C. The InAs/GaAs multi-quantum wells with InAlAs barriers using MEE grown at 230 °C show good single crystals with sharp interfaces, without mismatch dislocations found. The Raman results reveal that the MEE mode enables the growth of (InAs)4(GaAs)3/InAlAs QWs with excellent periodicity, effectively reducing alloy scattering. The room temperature (RT) photoluminescence (PL) measurement shows the strong PL responses with narrow peaks, revealing the good quality of the MEE-grown QWs. The RT electron mobility of the sample grown in low-temperature MEE mode is as high as 2100 cm2/V*s. In addition, the photoexcited band-edge carrier lifetime was about 3.3 ps at RT. The high-quality superlattices obtained confirm MEE’s effectiveness for enabling advanced III-V device structures at reduced temperatures. This promises improved performance for applications in areas such as high-speed transistors, terahertz imaging, and optical communications.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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“…The most common structural design of resonant beam splitters (RBSs) is usually composed of several high-quality (high-Q) resonant DOEs (ring, disk, microcylinder, microsphere) coupled to the commutation buses in the form of rectangular or cylindrical waveguides forming the through and drop ports of the optical signal output. The resonators themselves are usually in close subwavelength contact with each other in a serial [4] or parallel structural topology [5,20]. The working principle of a typical RBS relies on resonant excitation of specific resonator eigenmode(s) which, ideally, captures all optical energy in the through port(s) and blocks forward optical wave propagation, but redirects the optical energy to the drop channel(s) that is usually connected to the other side of the resonance cavity [5,14].…”

Section: Introductionmentioning

confidence: 99%

Design of Photonic Molecule-Based Multiway Beam Splitter/Coupler with Variable Division Ratio

Geints

2024

Photonics

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An optical beam splitter is used for dividing an input optical beam into several separate beams with a specific power ratio. Usually, conventional optical beam splitters have bulky dimensions (many optical wavelengths) and a fixed dividing ratio, which significantly limit the design of new miniaturized optical devices and integrated optical circuits. We propose and investigate in detail a novel physical concept of a highly miniaturized (up to two working wavelengths) planar optical resonant splitter/coupler with a switching element comprising a photonic molecule (PM) pair dispersing input optical fluxes in multiple directions with a tailored power ratio. The structural design of the proposed splitter is based on a silicon-on-insulator (SOI) platform and composed of high-quality resonators in the form of electromagnetically coupled submicron-sized microcylinders. The control on the power division ratio and the selection of optical beam directions is realized by tuning the photonic splitter structure to the corresponding resonance of the PM supermode. Compared to known analogs, the proposed design is easy and cheap in fabrication. Because of its tiny dimensions, it is suitable for integration into a “System-on-a-chip” platform and can dynamically change the beam power division ratio by input wave-phase manipulation.

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“…The most common structural design of resonant beam splitters (RBS) is usually composed of several high-quality (high-Q) resonant DOEs (ring, disk, microcylinder, microsphere) coupled to the commutation buses in the form of rectangular or cylindrical waveguides forming the through and drop-ports of the optical signal output. The resonators themselves are usually in close subwavelength contact with each other in a serial [4] or parallel structural topology [5,20]. In optical splitters based on multimode interaction, the interconnection of resonant elements and waveguide buses is realized by indirect coupling of evanescent electromagnetic fields of the eigenmodes.…”

mentioning

confidence: 99%

Design of Photonic-Molecule-Based Multiway Beam Splitter/Coupler with Variable Division Ratio

Geints

2023

Preprint

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Optical beam splitter is used for dividing an input optical beam into several separate beams with specific power ratio. Usually, conventional beam splitters have bulky dimensions and fixed dividing ratio which significantly limit the design of new miniaturized optical devices and integrated optical circuits. We propose and investigate a novel physical concept of a miniaturized planar optical splitter/coupler with a switching element in the form of a photonic molecule (PM) pair dispersing input optical fluxes along multiple ways with variable power proportions. The structural design of the proposed splitter is based on a silicon-on-insulator (SOI) platform and composed of high-quality resonators in the form of electromagnetically coupled submicron-sized microcylinders. The control on the power division ratio and the selection of optical beam directions is realized by tuning the photonic splitter structure to the corresponding resonance of PM supermode. Compared to known analogues, the proposed design is easy to fabricate, suitable for integration into a "System-on-a-chip" platform and can dynamically change the beam power division ratio by input wave-phase manipulation.

show abstract

Tunable Vernier Series-Coupled Microring Resonator Filters Based on InGaAs/InAlAs Multiple Quantum-Well Waveguide

Cited by 4 publications

References 30 publications

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Design of Photonic Molecule-Based Multiway Beam Splitter/Coupler with Variable Division Ratio

Design of Photonic-Molecule-Based Multiway Beam Splitter/Coupler with Variable Division Ratio

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