Tunable twin-guide laser: A novel laser diode with improved tuning performance

Amann, Markus‐Christian; Illek, S.; Schanen, C.; Thulke, W.

doi:10.1063/1.101065

Cited by 52 publications

(10 citation statements)

References 5 publications

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“…11. CW Operation up to 45 • C is achieved with output power up to 0.5 mW at 10 • C. Discontinuities in the output power characteristics are a result of temperature induced cavity mode hops [29]. DC extinction characteristics from the integrated EAM are shown in Fig.…”

Section: Quantum Well Intermixing and Electroabsorption Modulatorsmentioning

confidence: 99%

Hybrid silicon evanescent approach to optical interconnects

et al. 2009

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We discuss the recently developed hybrid silicon evanescent platform (HSEP), and its application as a promising candidate for optical interconnects in silicon. A number of key discrete components and a wafer-scale integration process are reviewed. The motivation behind this work is to realize silicon-based photonic integrated circuits possessing unique advantages of III-V materials and silicon-oninsulator waveguides simultaneously through a complementary metal-oxide semiconductor fabrication process. Electrically pumped hybrid silicon distributed feedback and distributed Bragg reflector lasers with integrated hybrid silicon photodetectors are demonstrated coupled to SOI waveguides, serving as the reliable on-chip single-frequency light sources. For the external signal processing, MachZehnder interferometer modulators are demonstrated, showing a resistance-capacitance-limited, 3 dB electrical bandwidth up to 8 GHz and a modulation efficiency of 1.5 V mm. The successful implementation of quantum well intermixing technique opens up the possibility to realize multiple III-V bandgaps in this platform. Sampled grating DBR devices integrated with electroabsorption modulators (EAM) are fabricated, where the bandgaps in gain, mirror, and EAM re-

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Section: Quantum Well Intermixing and Electroabsorption Modulatorsmentioning

confidence: 99%

Hybrid silicon evanescent approach to optical interconnects

et al. 2009

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“…Among these are the multisection DBR devices [19,20,21] and the TTG (Tunable Twin-Guide) laser [22,23], in both of which tuning is performed by index change in a passive region and multisection DFB lasers, in which an axially varying bias to the active region induces the wavelength tuning [24,25,26].…”

Section: )mentioning

confidence: 99%

Wavelength Tunable Laser Diodes and Their Applications

Amann¹

1995

Trends in Optical Fibre Metrology and Standards

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Single mode laser diodes with an electronically tunable wavelength are among the key components needed for advanced applications in optical communications, measurement and sensing. In particular, these devices may be used as wavelength controllable transmitters in wavelength division multiplexing or as local oscillators in optical receivers using the coherent detection technique. Furthermore, distance measurements with a high accuracy and large repetition frequency as well as threedimensional viewing are feasible using the frequency modulated continuous wave radar technique in the optical domain. Also numerous measurement techniques in optoelectronics and fiber optics can be performed by means of wavelength tunable lasers. This paper reviews the recent progress made on electronically wavelength tunable laser diodes in the InGaAsP material system at 1.5 11m wavelength. The operation principles and technological approaches of the various device concepts are presented and the laser parameters relevant for anticipated applications, such as tuning range, spectral linewidth and wavelength access, are discussed.The continuous and discontinuous tuning modes are introduced, compared and the physical limitations with respect to the maximum tuning ranges are commented on. Particular attention is paid to device handling and the effort needed for wavelength control which are most important for practical applications.

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“…1a, is based on the DFB-TTG laser [8]. In the SG-TTG laser [5], the vertically integrated tuning layer is longitudinally split into two sections, that contain sampled gratings (SG's) instead of DFB gratings.…”

Section: Introductionmentioning

confidence: 99%

Sampled grating tunable twin‐guide laser diodes with wide tuning range (≥40 nm) and large output power (≥10 mW)

Todt

Jacke

Meyer

et al. 2006

Phys. Status Solidi (c)

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The sampled grating tunable twin-guide (SG-TTG) laser diode is a DFB-like tunable laser that employs Vernier-effect tuning to achieve wide wavelength tuning. In contrast to most other monolithic widely tunable lasers (which are usually DBR-type lasers), a phase tuning section is not needed and, hence, the SG-TTG laser requires at least one tuning current less than comparable devices. The devices provide full wavelength coverage over a 40 nm-broad tuning range that is centered at 1.54 µm. Its tuning behavior is quasi-continuous with up to 8.2 nm broad continuous tuning regions. High side-mode suppression (SMSR ≥ 35 dB) as well as large output power (P ≥ 10 mW) are obtained over the whole wavelength range from 1520.5 to 1561.5 nm.

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Tunable twin-guide laser: A novel laser diode with improved tuning performance

Cited by 52 publications

References 5 publications

Hybrid silicon evanescent approach to optical interconnects

Hybrid silicon evanescent approach to optical interconnects

Wavelength Tunable Laser Diodes and Their Applications

Sampled grating tunable twin‐guide laser diodes with wide tuning range (≥40 nm) and large output power (≥10 mW)

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