2013
DOI: 10.1063/1.4776734
|View full text |Cite
|
Sign up to set email alerts
|

Tunable topological electronic structures in Sb(111) bilayers: A first-principles study

Abstract: Electronic structures and band topology of a single Sb(111) bilayer in the buckled honeycomb configuration are investigated using first-principles calculations. A nontrivial topological insulating phase can be induced by tensile strain, indicating the possibility of realizing the quantum spin Hall state for Sb thin films on suitable substrates. The presence of buckling provides an advantage in controlling the band gap through an out-of-plane external electric field, making a topological phase transition with s… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

5
111
0

Year Published

2013
2013
2022
2022

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 111 publications
(116 citation statements)
references
References 32 publications
5
111
0
Order By: Relevance
“…In particular, 2D TIs are predicted in thin films of almost every class of 3D TIs [e.g., Bi/Sb, Sn, Bi2Se3, Bi2Te3, Ge(Bi,Sb)2Te4, Tl-based chalcogenides]. Wada et al 2011;Chuang et al 2013;Singh et al 2013;Lin, Markiewicz et al 2010) The topological characteristics are sensitive to thickness, composition and strain, and are tunable by electrical gating. Substrates can modify the electronic structure and change the band topology.…”
Section: Ivd 2d Topological Materialsmentioning
confidence: 99%
See 2 more Smart Citations
“…In particular, 2D TIs are predicted in thin films of almost every class of 3D TIs [e.g., Bi/Sb, Sn, Bi2Se3, Bi2Te3, Ge(Bi,Sb)2Te4, Tl-based chalcogenides]. Wada et al 2011;Chuang et al 2013;Singh et al 2013;Lin, Markiewicz et al 2010) The topological characteristics are sensitive to thickness, composition and strain, and are tunable by electrical gating. Substrates can modify the electronic structure and change the band topology.…”
Section: Ivd 2d Topological Materialsmentioning
confidence: 99%
“…15), and other devices for manipulating spin currents. Gupta et al 2014;Chuang et al 2013) Although silicene has been grown on various substrates, the resulting electronic and geometric structures may be quite different from those of freestanding silicene films. (Vogt et al 2012;Fleurence et al 2012;Meng et al 2013) Honeycomb III-V thin films are a natural extension of silicene, and low-buckled GaBi, InBi, and TlBi thin films are predicted to be 2D TIs.…”
Section: Ivd2 Graphenementioning
confidence: 99%
See 1 more Smart Citation
“…χ is the stiffness parameter, and υ 0 the surface average over e 2χξ(R) [Eq. (6)] for the reciprocal lattice vector G = 0]. Since ξ (R) is periodic, Eq.…”
Section: Corrugated Morse Potential (Cmp)mentioning
confidence: 99%
“…4,5 Hence Sb(111) films do offer attractive features for potential applications in spintronics such as a tunable band gap and spin polarization. 6 The electronic surface states of antimony have been studied both experimentally and theoretically, [7][8][9][10][11][12][13] whereas for the surface dynamics of Sb(111), only theoretical investigations are available. 13 Furthermore, the atom-surface interaction as observed in scattering experiments has not been addressed, with the exception of a study of the adsorption of water on Sb(111).…”
Section: Introductionmentioning
confidence: 99%