2018
DOI: 10.1016/j.apsusc.2018.01.140
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Tunable Schottky barrier and electronic properties in borophene/g-C2N van der Waals heterostructures

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Cited by 30 publications
(17 citation statements)
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“…According to the PDOS of the heterostructure with Li, we found that the whole system remained metallic after the lithiation process (Figure b), in good accordance with previous reports. , On the basis of the above analysis, it can be inferred that 2-layer borophene could have a better adsorption property of Li, and the expansive work could be done in the future.…”
Section: Resultssupporting
confidence: 90%
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“…According to the PDOS of the heterostructure with Li, we found that the whole system remained metallic after the lithiation process (Figure b), in good accordance with previous reports. , On the basis of the above analysis, it can be inferred that 2-layer borophene could have a better adsorption property of Li, and the expansive work could be done in the future.…”
Section: Resultssupporting
confidence: 90%
“…Thus, it is very important to find a new alternative basis. There are plenty of research studies focusing on the borophene-based heterostructures, including borophene/TMDs (MoS 2 , MoSe 2 , WS 2 , and WSe 2 ), borophene/IV-enes (graphene, silicene, germanene, and stanine), borophene/V-enes (blue phosphorene, black phosphorene, arsenene, and antimonene), , and so on. , On the basis of first-principles calculations, these materials are predicted to be potential candidates for nanoelectronics, including anode materials for alkali metal ion batteries. , At present, the research studies of borophene-based materials for LIB applications are still based on theoretical calculations. According to previous work, it is generally accepted that borophene has high specific capacity , and high mechanical strength with metallicity, but the properties of the borophene-based heterostructures do not inherit well that of the monolayer borophene.…”
Section: Introductionmentioning
confidence: 99%
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“…Using ab initio methods, it is predicted that borophene in combination with various 2D semiconductor materials is a promising material for the formation of the Schottky barrier. Tunable Schottky barriers based on van der Waals heterostructures borophene/InSe [44], borophene/g-C 2 N [45], borophene/MoSe 2 , and borophene/WSe 2 [46] have already been proposed.…”
Section: Introductionmentioning
confidence: 99%
“…Van der Waal heterostructure used first-principle calculations, noticed effective charge transport in heterostructure while applied external electric field. The consequence, of we, have an opportunity to tune carrier concentration and Schottky barrier with the help of tuning in the Van der Waal heterostructure[81]. This insight can be useful in nanophotonic and optoelectronic devices.…”
mentioning
confidence: 99%