Tunable rectification and negative differential resistance induced by asymmetric doping in phosphorene nanoribbon

Nitrogen-doped zinc oxide nanoribbons for potential resonant tunneling diode applications

“…30 Several other 2D materials exhibit the NDR mechanism, such as phosphorene, silicene, graphene, boron nitride, etc. [31][32][33][34][35][36] Phosphorene nanoribbons and boron nitride nanoribbons have both been found to exhibit the NDR phenomenon upon fluorination. 33,37 ZnONRs have also been explored for NDR characteristics previously.…”

“…[31][32][33][34][35][36] Phosphorene nanoribbons and boron nitride nanoribbons have both been found to exhibit the NDR phenomenon upon fluorination. 33,37 ZnONRs have also been explored for NDR characteristics previously. Doping and passivation approaches are used to develop the NDR mechanism in the ZnONRs.…”

Regulating the rectifying effect of zigzag germanium selenide nanoribbons by selective edge decoration

“…The RR is modulated up to the order of 10 4 by tuning the doping position in the armchair graphene nanoribbon based on the device, in which N atoms were doped at the edges in the left part and at one edge and the center in the right part, respectively [26]. For armchair phosphorene nanoribbon, the asymmetric doping of the impurity atoms can lead to a robust rectification with an RR of 1.2 × 10 5 [27]. However, the zero band gap of graphene is unsuitable for application in semiconductor logical devices [28], and the lack of stability in the atmospheric environment is a fundamental challenge for phosphorene [29].…”