2017
DOI: 10.1016/j.micromeso.2017.02.010
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Tunable porous boron nitride: Investigating its formation and its application for gas adsorption

Abstract: Boron nitride (BN) has applications in a number of areas: it can be used as lubricant, as insulating thermoconductive filler or UV-light emitter. BN can also capture large amounts of hydrocarbons and gaseous molecules, provided that it exhibits a porous structure. This porous structure also enables its application as a drug-delivery nanocarrier. Little if anything is known on controlling the porosity of BN, even though it has tremendous implications in terms of adsorption performance and drug delivery properti… Show more

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Cited by 63 publications
(61 citation statements)
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References 44 publications
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“…We attribute this peak to the borooxynitride (B-Ox-Ny) species, which stems from the in-plane substitution of oxygen atoms into the BN lattice, as we have described in a prior study. 29,51 Quite surprisingly, oxygen atoms are also observed on h-BN (6 at%) and are most likely related to edge hydroxyl groups. Oxygen atoms can enhance CO2 adsorption 52,53 and can also allow lead to reduction in band gap, as indicated by both computational and experimental work.…”
Section: Porous Bnan Adsorbent With Semiconductor Behaviourmentioning
confidence: 98%
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“…We attribute this peak to the borooxynitride (B-Ox-Ny) species, which stems from the in-plane substitution of oxygen atoms into the BN lattice, as we have described in a prior study. 29,51 Quite surprisingly, oxygen atoms are also observed on h-BN (6 at%) and are most likely related to edge hydroxyl groups. Oxygen atoms can enhance CO2 adsorption 52,53 and can also allow lead to reduction in band gap, as indicated by both computational and experimental work.…”
Section: Porous Bnan Adsorbent With Semiconductor Behaviourmentioning
confidence: 98%
“…The compelling features of BN include its metal-free nature as well as its tunable chemistry and structure that a priori allow for a tailored band structure. [27][28][29] Porous BN is the amorphous analogue of hexagonal boron nitride (h-BN), a wide band gap insulator (~5.5 eV). 30 Doping of this robust material and its utilisation in composites have been employed to reduce the band gap and allow the formation of heterojunctions, respectively.…”
mentioning
confidence: 99%
“…It was observed that the duration of drying periods of the crystal intermediates had a reflective effect on the crystal structure of the as‐synthesized h‐BN. The intermediates which were subjected to extend the drying periods thermally decayed between 100 °C to 250 °C releasing a large volume of porogens leaving behind highly porous h‐BN …”
Section: Development Of H‐bn Nanomaterialsmentioning
confidence: 99%
“…Urea 1.85/9 Distilled Water/ N 2 1050 @ 108C min À1 !BET area of 1016 m 2 g À1 . [58] The intermediate generated was subjected to varying drying periods. !Nanosheets.…”
Section: Template Free Synthesismentioning
confidence: 99%
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