Tunable optoelectronic properties of a two-dimensional graphene/α-In2Se3/graphene-based ferroelectric semiconductor field-effect transistor

Abstract

Two-dimensional (2D) materials are promising for future electronic and optoelectronic devices. In particular, 2D material-based photodetectors have been widely studied because of their excellent photodetection performance. Owing to its excellent electrical and optical characteristics, 2D indium selenide (α-In2Se3) is a good candidate for photodetection applications. In addition, α-In2Se3 samples, including atom-thick α-In2Se3 layers, present ferroelectric properties. Herein, we report the fabrication and electrical and optoelectronic properties of multilayered graphene (Gr)/α-In2Se3/Gr-based ferroelectric semiconductor eld-effect transistors (FeS-FETs). Furthermore, we discuss the physical mechanisms affecting electronic and optoelectronic transport in the Gr/α-In2Se3/Gr heterostructure. Large hysteresis was observed in the transfer characteristic curves and it was attributed to the ferroelectric polarization of MTL α-In2Se3 and carrier trapping-detrapping effects. The optoelectronic performance of the fabricated FeS-FETs depended on the ferroelectric properties of α-In2Se3 and can be easily tuned to achieve the maximum photoresponsivity and speci c detectivity of 10 AW-1 and 4.4 × 1012 cmHz1/2W-1, respectively.

An all-two-dimensional Fe-FET retinomorphic sensor based on the novel gate dielectric In2Se3−xOx

“…† In this all-2D Fe-FET photodetector, the on/off current ratio and specific detectivity are comparable to the best reported 2D ferroelectric material photodetectors, as shown in Table S1 † of the ESI. 15,19,21,48 More interestingly, under positive gate voltage, a large dark current and photocurrent retention properties after the light is turned off were found, as shown in Fig. 5(a), which could act as the excitatory postsynaptic current (EPSC) for an artificial synaptic device.…”

“…The 2D ferroelectric semiconductor α-In 2 Se 3 , as a channel material, has been taken out of synaptic devices, but still needs to be integrated with traditional 3D gate materials, which increases the uncontrollability of the interface and the complexity of the device structure. 15,18,21 When the 2D ferroelectric semiconductor material α-In 2 Se 3 is used as a ferro-electric gate material, its relatively lower bandgap leads to higher gate current and higher power consumption. As a result, the gate current of ferroelectric field-effect transistors (Fe-FETs) based on α-In 2 Se 3 is as large as 10 −10 A.…”

Polymorphism and Ferroelectricity in Indium(III) Selenide

“…Successive mechanical exfoliation of the same flakes results in a few-layer sample of In 2 Se 3 , which can then be transferred onto a substrate for analysis. Many reports that study the properties of a single phase of In 2 Se 3 utilize this method, given its reliability and ease of preparation. − …”

“…Multilayer In 2 Se 3 has been employed as a channel material for semiconductor field effect transistors (FETs) in a multitude of studies in recent years. Its coupled in-plane and out-of-plane dipole locking mechanism has enabled versatile device design, ranging from its use as the primary channel component to be utilized as a wrapping material for a semiconductor channel. ,,, …”

“…Its coupled in-plane and out-of-plane dipole locking mechanism has enabled versatile device design, ranging from its use as the primary channel component to be utilized as a wrapping material for a semiconductor channel. 36,37,39,56 In one particular study, α-In 2 Se 3 was utilized as the channel material gated by Cr/Au lateral electrodes on SiO 2 /Si by Feng et al 13 The phase of the In 2 Se 3 channel was changed α to β via annealing, and the differences in electronic properties compared. The current on/off ratio of α-In 2 Se 3 -FET was observed to be ∼500, while that of the β phase was only 1.6.…”