Tunable Optical Gain Characteristics of AlN/GaN/InAlN Quantum Well Heterostructure under Uniaxial and Biaxial Pressures

Abstract

In the last couple of decades, an extensive study of type-I heterostructures has been carried out and the researchers have found their applications in optoelectronic devices like light emitting diodes (LEDs), lasers, and in communication systems based on the optical fiber technology. [1][2][3] However, type-II heterostructures have found their utilizations in photovoltaic applications like solar cells and photodetectors. [4][5][6][7][8] In case of type-I quantum well (QW) heterostructures, electrons and holes are restricted in the identical spatial regions and so there exist a QW for electrons and a QW for holes. However, in case of type-II QW heterostructures, the alignment of interfaces occurs in a manner that either the valence band edge or the conduction band edge exists inside the other.However, there had been a significant advancement in the growth of III-nitride group built heterostructures since their possible applications in manufacturing the several electronic and the optical devices like laser diodes, LEDs, field effect transistors (FETs), tandem solar cells, and Schottky junctions. [9][10][11][12][13][14][15][16][17][18] III-nitride semiconductor substances include AlN, InN, GaN, and their derivatives that possess great wide bandgaps which are preferable for current optoelectronic and electronic applications. [19][20][21][22] The special abilities of III-nitrides comprise excessive dielectric breakdown voltage, significant thermal and chemical stability, extreme breakdown voltage, great saturated drift rate, wide bandgap that ranges from infrared to deep ultraviolet, etc. III-nitride semiconductors generally devise together with Wurtzite crystal arrangement that is because of the absence of inversion symmetry, and hence responsible for piezoelectric behavior in them. They emerge as the earliest semiconductor system where extended defects