Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications

Bui, H.D.; Jappor, Hamad Rahman; Hieu, Nguyen N.

doi:10.1016/j.spmi.2018.10.020

Cited by 81 publications

(35 citation statements)

References 42 publications

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“…The calculated band structure in Figure a shows that Ga 2 SeTe is a direct semiconductor with a bandgap of 1.18 eV, which is in excellent agreement with the previous literature . The corrected bandgap of Ga 2 SeTe monolayer calculated by DFT‐1/2 method is 1.76 eV, as shown in Figure S1, Supporting Information.…”

Section: The Calculated Distance Blinding Energies and Bandgap Of Fsupporting

confidence: 85%

“…Optimizing geometry is performed using the limited memory Broyden–Fletcher–Goldfarb–Shannon scheme until all interatomic forces acting on every atom are below 0.02 eV Å −1 . The calculated lattice constant of Ga 2 SeTe monolayer is 3.98 Å, which is quite consistent with previous literature . The vacuum region is set to 20 Å at least in the out‐of‐plane direction with Neumann conditions to eliminate the interaction between the two plates.…”

Section: The Calculated Distance Blinding Energies and Bandgap Of Fsupporting

confidence: 65%

“…The calculated band structure in Figure 1a shows that Ga 2 SeTe is a direct semiconductor with a bandgap of 1.18 eV, which is in excellent agreement with the previous literature. [27] The corrected bandgap of Ga 2 SeTe monolayer calculated by DFT-1/2 method is 1.76 eV, as shown in Figure S1, Supporting Information. The optical absorption presented in Figure 1b shows that Ga 2 SeTe monolayer has the strong capacity of light absorption in the range between 3 and 12 eV.…”

mentioning

confidence: 99%

“…[25] The calculated lattice constant of Ga 2 SeTe monolayer is 3.98 Å, which is quite consistent with previous literature. [26,27] The vacuum region is set to 20 Å at least in the out-of-plane direction with Neumann conditions to eliminate the interaction between the two plates. A well-conserved Monkhorst-Pack 51 Â 51 Â 1 k-point mesh is used for both geometry optimization and electronic properties calculations in the minimal unit cell.…”

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confidence: 99%

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Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

et al. 2019

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The electronic and optical properties of Janus Ga2SeTe monolayer are calculated using first‐principles calculations and it is found that it has potential in solar cells. It is found that ultrathin cross‐plane pn‐junctions are obtained by stacking Ga2SeTe structures. The graphene‐Ga2SeTe‐graphene sandwich‐structured solar cells are configured to explore the device performance of Ga2SeTe solar cells. The photocurrent and the power conversion efficiency of the Janus Ga2SeTe solar cells are evaluated. The results show that multilayer Janus Ga2SeTe solar cells give rise to a photocurrent exceeding that of thin‐film silicon devices, indicating that Ga2SeTe is a potential material that could be used in photovoltaics devices.

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Section: The Calculated Distance Blinding Energies and Bandgap Of Fsupporting

confidence: 85%

Section: The Calculated Distance Blinding Energies and Bandgap Of Fsupporting

confidence: 65%

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confidence: 99%

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confidence: 99%

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Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

et al. 2019

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“…Another class of 2D pS is Janus group‐III chalcogenides (M 2 XY, M = Al, Ga, In; X ≠ Y = S, Se, Te) 18. The Janus M 2 XY monolayers were demonstrated as candidates for nano‐optoelectronics and photocatalytic water splitting 19–23. The third class of 2D pS is Janus transition metal dichalcogenides (TMDs) 1,24.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Shao

Wang

Pan

et al. 2019

Adv Elect Materials

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Two‐dimensional (2D) layered semiconductors with an intrinsic electric dipole p (pS for short), including group III2‐VI3 ferroelectrics and various Janus semiconductors, are attracting increasing attention for their exotic properties and versatile applications. Their potential in metal–semiconductor junctions is revealed. It is demonstrated that, for pS contacting to 2D metals with a wide range of work‐functions, Schottky‐barrier‐free (SB‐free) and tunable n‐ to p‐type contacts can be obtained, which is important for complementary metal‐oxide‐semiconductor logical circuitry. As expected, low (high) work‐function (WF) metals form n‐type (p‐type) SB‐free contacts to pS. What is unexpected is the behavior of medium‐WF metal‐pS junctions (MpSJ); that is, by switching the polarization in pS, both n‐ and p‐type SB‐free contacts can be obtained by the same pS contacting to metals with a wide range of WF. More importantly, MpSJ with bilayer pS can form both n‐ and p‐type SB‐free contacts. These findings, SB‐free and contact‐type‐tunable of MpSJ for metals with a wide range of work‐functions, demonstrate the great potential of 2D pS for device applications.

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Density functional theory-based strain engineering of electronic optical and thermoelectric properties of A2OX (A = Ga, in and X = S, Se) monolayers

Khan,

Ahmad,

Amin

et al. 2024

Appl. Phys. A

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Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications

Cited by 81 publications

References 42 publications

Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Density functional theory-based strain engineering of electronic optical and thermoelectric properties of A2OX (A = Ga, in and X = S, Se) monolayers

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Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications

Cited by 81 publications

References 42 publications

Janus Ga2SeTe: A Promising Candidate for Highly Efficient Solar Cells

Janus Ga2SeTe: A Promising Candidate for Highly Efficient Solar Cells

Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n‐ and p‐Type Ohmic Contacts to Metals with a Wide Range of Work Functions

Density functional theory-based strain engineering of electronic optical and thermoelectric properties of A2OX (A = Ga, in and X = S, Se) monolayers

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Product

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Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells

Janus Ga₂SeTe: A Promising Candidate for Highly Efficient Solar Cells