2023
DOI: 10.1016/j.optlastec.2022.108664
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Tunable NIR absorption in a Ge2Sb2Te5-based 1D asymmetric nonlinear hybrid nanostructure

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Cited by 8 publications
(4 citation statements)
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“…It is obvious that the defect state mode is excited because of the defected (AB) N C(BA) N structure. 65,66…”
Section: Resultsmentioning
confidence: 99%
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“…It is obvious that the defect state mode is excited because of the defected (AB) N C(BA) N structure. 65,66…”
Section: Resultsmentioning
confidence: 99%
“…It is obvious that the defect state mode is excited because of the defected (AB) N C(BA) N structure. 65,66 Considered that the OTS mode and defect state mode can be excited in the respective D(AB) N and (AB) N C(BA) N structures, it is expected that their combination may enable the simultaneous excitation of the OTS mode and defect state mode. Interestingly, from Fig.…”
Section: Resultsmentioning
confidence: 99%
“…For example, Fang et al demonstrated the nonreciprocal absorption in a metamaterial slab arranged by the inclined metal layers, this structure enables total absorption along one direction and total transmittance along the opposite propagation direction, showcasing its potential in stealth technology [32]. In addition, Rashidi et al combined the phase-change material, Ge 2 Sb 2 Te 5 (GST) and a 1DPC to achieve the different absorption along two opposite propagation directions, whose maximum difference between two opposite directions may reach up to 0.5 [33]. Shi et al proved that a magnetized ferrite photonic crystal has the nonreciprocal GH shift and it can be modulated by the angle of incidence, which offers new insights for the design of the directional dependent angle sensors [34].…”
Section: Introductionmentioning
confidence: 99%
“…They have been also pioneered for the realization of optical fast switching applications [18]. The most studied nonlinear optical switching elements are periodic structures with ability of supporting nonlinear phenomena such as bi(multi) stability and nonreciprocity, which are basis for designing optical diodes, isolators, optical transistors, and so on [19][20][21][22][23][24][25][26]. An inherent issue in these structures is the substantial input intensities required for exciting the nonlinear properties which hinders utilizing them in standard practical applications.…”
Section: Introductionmentioning
confidence: 99%