Tunable magnetism in ferroelectric α -In2Se3 by hole-doping

Abstract

Two-dimensional (2D) multiferroics attract intensive investigations because of underlying science and their potential applications. Although many 2D systems have been observed/predicted to be ferroelectric or ferromagnetic, 2D materials with both ferroic properties are still scarce. By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric α-In2Se3 due to its unique flat band structure, and the Curie temperature (TC) can be much higher than room temperature. Moreover, the doping concentration, strain, and number of layers can effectively modulate the magnetic moment and the TC of the material. Interestingly, strong magnetoelectric coupling is found at the surface of hole doped multilayer α-In2Se3, which allows non-volatile electric control of magnetization. Our work provides a feasible approach for designing/searching 2D multiferroics with great potential in future device applications, such as memory devices and sensors.

Doping-induced magnetism and magnetoelectric coupling in one-dimensional NbOCl3 and NbOBr3

“…2(a) and (b); for both 1D NbOCl 3 and NbOBr 3 , a small amount of electron-doping concentration (0.1 Â 10 14 cm À2 ) can endow them with magnetic moment. It is lower than those of some other 2D systems that can be induced with magnetism similarly by doping, such as a-In 2 Se 3 (0.80 Â 10 14 cm À2 ) 47 and monolayer iodine (0.88 Â 10 14 cm À2 ), 48 making the doping-induced magnetism easier to achieve experimentally. Furthermore, the magnetic moments reach 1 m B per doped electron under a large concentration range (0.1 Â 10 14 cm À2 -3.7 Â 10 14 cm À2 ), which means that doped electrons are 100% spin-polarized, and the systems are half-metal.…”

Monolayer GaOCl: a novel wide-bandgap 2D material with hole-doping-induced ferromagnetism and multidirectional piezoelectricity

“…For example, T c increases to 1400 K and 2500 K under the doping densities of 3.42 × 10 14 cm −2 and 6.83 × 10 14 cm −2 , respectively. Such T c is much higher than those of intrinsic magnetic systems and even higher than those of some systems with doping-induced ferromagnetism, 14,68,69 implying the ultrahigh ferromagnetic stability of the GaOCl monolayer at various hole-doping concentrations.…”

Doping Process of 2D Materials Based on the Selective Migration of Dopants to the Interface of Liquid Metals

“…Doped 2D semiconducting metal oxides are of particular interest where new guest species are inserted into the mon olayer structures and, as the result, the original physical and chemical characteristics are altered, offering new properties and applications in electronics, optics, sensing, piezotronics, magnetism and catalysis. [17][18][19][20][21][22][23] Among 2D semiconducting metal oxides, tin monoxide (SnO) is known to be a high performance widebandgap semiconductor showing intrinsic ptype conductance. As one of the most promising oxides for nextgeneration transparent electronics and displays, SnO can also be doped with other materials to show both p and ntype behavior.…”