Tunable Lattice Reconstruction, Triangular Network of Chiral One-Dimensional States, and Bandwidth of Flat Bands in Magic Angle Twisted Bilayer Graphene
Abstract:The interplay between interlayer van der Waals interaction and intralayerlattice distortion can lead to structural reconstruction in slightly twisted bilayer graphene (TBG) with the twist angle being smaller than a characteristic angle θ c . Experimentally, the θ c is demonstrated to be very close to the magic angle (θ ≈ 1.05°). In this work, we address the transition between reconstructed and unreconstructed structures of the TBG across the magic angle by using scanning tunnelling microscopy (STM). Our experi… Show more
“…All these works indicate that the diffusion barrier introduced by the moiré potential could be modified to affect exciton migration by tuning the twist angle or stacking mode between the constituent monolayers, which offers a novel way to control the exciton transport behavior in potential excitonic devices. However, note that when the twist angle between layers was rather small (generally less than 1°), atomic reconstruction could take place and was expected to have a profound effect on the band structures of the twisted bilayers [190][191][192][193] . In this case, the continuously varying rigidlattice moiré pattern transformed to discrete commensurate domains divided by narrow domain walls, which had also been recently observed in twisted TMD vdW bilayers 194,195 .…”
Section: Interlayer Exciton Transport Under Moiré Potentialsmentioning
Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits, which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence, numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons, including revealing their ultrafast formation, long population recombination lifetimes, and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics, and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present, a systematic and comprehensive overview of interlayer exciton formation, relaxation, transport, and potential applications is still lacking. In this review, we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.
“…All these works indicate that the diffusion barrier introduced by the moiré potential could be modified to affect exciton migration by tuning the twist angle or stacking mode between the constituent monolayers, which offers a novel way to control the exciton transport behavior in potential excitonic devices. However, note that when the twist angle between layers was rather small (generally less than 1°), atomic reconstruction could take place and was expected to have a profound effect on the band structures of the twisted bilayers [190][191][192][193] . In this case, the continuously varying rigidlattice moiré pattern transformed to discrete commensurate domains divided by narrow domain walls, which had also been recently observed in twisted TMD vdW bilayers 194,195 .…”
Section: Interlayer Exciton Transport Under Moiré Potentialsmentioning
Van der Waals (vdW) heterostructures based on transition metal dichalcogenides (TMDs) generally possess a type-II band alignment that facilitates the formation of interlayer excitons between constituent monolayers. Manipulation of the interlayer excitons in TMD vdW heterostructures holds great promise for the development of excitonic integrated circuits that serve as the counterpart of electronic integrated circuits, which allows the photons and excitons to transform into each other and thus bridges optical communication and signal processing at the integrated circuit. As a consequence, numerous studies have been carried out to obtain deep insight into the physical properties of interlayer excitons, including revealing their ultrafast formation, long population recombination lifetimes, and intriguing spin-valley dynamics. These outstanding properties ensure interlayer excitons with good transport characteristics, and may pave the way for their potential applications in efficient excitonic devices based on TMD vdW heterostructures. At present, a systematic and comprehensive overview of interlayer exciton formation, relaxation, transport, and potential applications is still lacking. In this review, we give a comprehensive description and discussion of these frontier topics for interlayer excitons in TMD vdW heterostructures to provide valuable guidance for researchers in this field.
“…This gap is quite larger than the pure Coulomb gap for a system with comparable size [191], which indicates there is a significant spin splitting of triangulene [186]. The tip-assisted method in this work is also proved to be an effective way to manipulate the structure or property of 2D materials, which is widely used in other researches until now [134,[192][193][194].…”
Section: The Properties Of Triangulene and π-Extended Triangulenementioning
Graphene quantum dots (GQDs) not only have potential applications on spin qubit, but also serve as essential platforms to study the fundamental properties of Dirac fermions, such as Klein tunneling and Berry phase. By now, the study of quantum confinement in GQDs still attract much attention in condensed matter physics. In this article, we review the experimental progresses on quantum confinement in GQDs mainly by using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Here, the GQDs are divided into Klein GQDs, bound-state GQDs and edge-terminated GQDs according to their different confinement strength. Based on the realization of quasi-bound states in Klein GQDs, external perpendicular magnetic field is utilized as a manipulation approach to trigger and control the novel properties by tuning Berry phase and electron-electron (e-e) interaction. The tip-induced edge-free GQDs can serve as an intuitive mean to explore the broken symmetry states at nanoscale and single-electron accuracy, which are expected to be used in studying physical properties of different two-dimensional materials. Moreover, high-spin magnetic ground states are successfully introduced in edge-terminated GQDs by designing and synthesizing triangulene zigzag nanographenes.
“…As mentioned, the dependence of magic-angle θ MA on interlayer and intralayer tunneling strengths described in equation ( 2) suggests that θ MA can be tuned by modifying w and t, for instance, by applying in-plane strains and vertical pressure [26,78,[80][81][82][83][84] as illustrated in figure 15. In particular, the intralayer hopping energies are reduced by a tensile in-plane strain while the interlayer tunneling strength increases when a vertical pressure is applied [85], thus increasing θ MA as shown.…”
Section: Flattening Electronic Bands and Tunabilitymentioning
Twisted bilayer graphene displays many fascinating properties that can be tuned by varying the relative angle (also called twist angle) between its monolayers. As a remarkable feature, both the electronic flat bands and the corresponding strong electron localization have been obtained at a specific "magic" angle (~ 1.1°), leading to the observation of several strongly correlated electronic phenomena. Such a discovery has hence inspired the creation of a novel research field called twistronics, i.e., aiming to explore novel physical properties in vertically stacked 2D structures when tuning the twist angle between the related layers. In this paper, a comprehensive and systematic study related to the electronic properties of twisted multilayer graphene (TMG) is presented based on atomistic calculations. The dependence of both the global and the local electronic quantities on the twist angle and on the stacking configuration are analyzed, fully taking into account atomic reconstruction effects. Consequently, the correlation between structural and electronic properties are clarified, thereby highlighting the shared characteristics and differences between various TMG systems as well as providing a comprehensive and essential overview. On the basis of these investigations, possibilities to tune the electronic properties are discussed, allowing for further developments in the field of twistronics.
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