Tunable infrared generation using a femtosecond 250 kHz Ti:sapphire regenerative amplifier

Reed, Murray K.; Steiner-Shepard, Michael K.; Negus, Daniel K.

doi:10.1109/3.511538

Cited by 40 publications

(12 citation statements)

References 8 publications

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“…17,18 At this low probe energy ͑95 meV͒, neither gallium vacancies nor deep donors are excited because they have larger binding energies, 19 and even if shallow impurities or defect complexes exist with binding energy around or inferior to 95 meV, they are expected to be few in number. For these experiments, we used a Ti:sapphire 200-kHz regenerative amplifier ͑Coherent͒ followed by a parametric amplifier and difference frequency mixer.…”

Section: Experimental Techniquementioning

confidence: 99%

Low-temperature-grown GaAs: Modeling of transient reflectivity experiments

Ortiz

Nagle

Lampin

et al. 2007

Journal of Applied Physics

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A simple nonradiative Shockley-Read-Hall recombination model is used to interpret transient reflectivity and midinfrared transmission experiments of low-temperature-grown GaAs (LT-GaAs) materials annealed under various conditions of temperature and duration. The model introduces two main parameters, namely the deep-donor (NDD) and the acceptor (NA) concentrations in the GaAs matrix, to explain all observed behaviors coherently with other results in the literature. A precise study of the different parameters (pump wavelength and power, NDD, NA, etc.) is performed using our model. The introduction of growth and anneal-related parameters, such as NA and NDD, allows a good understanding of LT-GaAs. These results demonstrate the importance of acceptor densities in the dynamic properties.

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Section: Experimental Techniquementioning

confidence: 99%

Low-temperature-grown GaAs: Modeling of transient reflectivity experiments

Ortiz

Nagle

Lampin

et al. 2007

Journal of Applied Physics

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“…1. A regeneratively amplified Ti:sapphire laser operating at 250 kHz pumps an optical parametric amplifier [15] configured to produce near-bandwidth-limited 120 fs signal (1550 nm) and idler (1650 nm) pulses, each with an average power of ϳ8 mW. A beta barium borate (BBO) crystal is used to generate 775 nm pulses ͑2v͒ from the signal beam ͑v͒.…”

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confidence: 99%

Quantum Interference in Electron-Hole Generation in Noncentrosymmetric Semiconductors

et al. 1999

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We show that, when fundamental optical beams are present in a noncentrosymmetric medium simultaneously with their sum-frequency beam, quantum interference between single-and two-photon transitions modifies the net absorption, if the sum frequency corresponds to an energy greater than the band gap. At a macroscopic level this effect can be related to the imaginary part of a second-order susceptibility and can be used to coherently control carrier populations and optical absorption. We illustrate this novel effect using phased 1550 and 775 nm, 120 fs pulses incident on GaAs at 295 K. PACS numbers: 78.47.+ p, 78.55.Cr The field of nonlinear laser optics dates from the observation of second-harmonic generation in crystalline quartz [1]. Although a myriad of nonlinear optical processes have been discovered since then [2-4], second-order ͑x 2 ͒ processes such as sum-and difference-frequency mixing continue to capture most of the interest. Of necessity x 2 is nonzero only in noncentrosymmetric media, such as certain crystals. When such a crystal is transparent at all frequencies involved, x 2 is real and the crystal can act as an optical "catalyst" to convert incident energy into new optical frequencies. If, however, the crystal is absorbing for at least one of the frequencies, the imaginary component of x 2 ͑Im͓x 2 ͔͒ is nonzero. In the case of sum-frequency generation, it is generally believed [5] that Im͓x 2 ͔ plays no role in energy absorption. Here we demonstrate that when coherent fundamental and sum-frequency beams are simultaneously present in a crystal, and if the sum frequency falls in a region of band absorption, Im͓x 2 ͔ can contribute to the removal of energy from all beams. This is due to the interference of single-and two-photon absorption pathways. This effect can be used in an active sense to coherently control optical transmission and band populations through the relative phase of the fields. We experimentally demonstrate this new effect in bulk GaAs at 295 K, and explicitly discriminate its origin and nature from the coherent control of current injection in semiconductors [6].

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“…Our IR probe is generated by difference frequency mixing the signal and idler OPA output in a 1-mm-thick type II AgGaS 2 crystal [10]. The 400-nm pump is obtained by frequency doubling the residual 800-nm OPA pump.…”

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confidence: 99%