2020
DOI: 10.1364/optica.393381
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Tunable geometric photocurrent in van der Waals heterostructure

Abstract: Utilizing the spin or valley degree of freedom is a promising approach for realizing more energy-efficient information processing devices. Circularly polarized light can be used to generate spin/valley current in monolayer 2D transition metal dichalcogenides. We observe a geometrically dependent photocurrent in heterostructure M o S 2 / W S e 2 , where light with a different circular po… Show more

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Cited by 11 publications
(20 citation statements)
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“…24,26 Under illumination by a circularly polarized light with certain helicity, the resulting CPGE current is a superposition of electron current and hole current, which propagates along the same direction but with an opposite sign. 31,39 Therefore, electron current and hole current tend to cancel each other in each single valley. In this SL-MoS 2 /FL-MoS 2 homojunction, the band alignment enables holes to undergo ultrafast transfer from SL-MoS 2 to FL-MoS 2 due to the relatively large valence band offset between them, while electron transfer can be neglected.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
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“…24,26 Under illumination by a circularly polarized light with certain helicity, the resulting CPGE current is a superposition of electron current and hole current, which propagates along the same direction but with an opposite sign. 31,39 Therefore, electron current and hole current tend to cancel each other in each single valley. In this SL-MoS 2 /FL-MoS 2 homojunction, the band alignment enables holes to undergo ultrafast transfer from SL-MoS 2 to FL-MoS 2 due to the relatively large valence band offset between them, while electron transfer can be neglected.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…24,26 Under illumination by a circularly polarized light with certain helicity, the resulting CPGE current is a superposition of electron current and hole current, which propagates along same direction but with an opposite sign. 31,38 Therefore, electron current and hole current tend to cancel each other in each single valley.…”
Section: Enhanced Cpge Response Through Built-in Electric Fieldmentioning
confidence: 99%
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“…S8). This is in contrast to electric dipole-induced bias-dependent CPGE, which typically gets modulated proportional to the electric-field strength that aids in symmetry breaking (31,42). Joule heating of the device beyond the transition temperature T c = 323 K can be ruled out as the heat required to raise the temperature of a typical device by 30 K is at least two orders of magnitude more than the heat generated by resistive heating at the 200-mV bias (see fig.…”
Section: Resultsmentioning
confidence: 91%