Tunable electronic structures of covalent triazine frameworks/GaS van der Waals heterostructures via a perpendicular electric field and parallel strain

Zhu, Jianhua; Jia, Zhe; Tan, Xingyi; Li, Qiang; Ren, Dahua

doi:10.1016/j.cplett.2022.140069

Cited by 2 publications

(1 citation statement)

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“…Another theoretical work about As/ graphene vdWh demonstrated that altering the interlayer distance can tune the Schottky barriers and contacts of vdWhs [26]. Our group studied the electronic properties of the CTF/GaS vdWh and found that external electric felds and strain can alter the band confgurations [27]. All of the above conclusions imply that stacking two 2D materials into vdWhs ofers an accessible method to build substitute artifcial materials that have enjoyable properties.…”

Section: Introductionmentioning

confidence: 83%

Theoretical Study on the Electronic Properties of Two-Dimensional Covalent Triazine Frameworks/As van der Waals Heterostructures

Zhu¹,

Hao²,

Pan³

et al. 2023

Advances in Condensed Matter Physics

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The manuscript substantiates the structural and electronic properties of covalent triazine frameworks (CTF)/As van der Waals heterostructures (vdWh) employing the standard first-principles calculation method. The numerical results designate that the CTF/As vdWh has robust crystal structures, a type-II band alignment (BA), and an indirect bandgap of 1.44 eV. The calculated results demonstrate that the strain could lead to interesting indirect-direct semiconductor transitions, while the external electric field could give rise to type-II to type-I BA and semiconductor-metal transitions. The underlined outcomes present the workability of CTF/As vdWhs in unprecedented high-performance optoelectronic equipment.

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Section: Introductionmentioning

confidence: 83%