Tunable electronic properties and Schottky barrier in a graphene/WSe<sub>2</sub> heterostructure under out-of-plane strain and an electric field

Zhang, Rui; Hao, Guoqiang; Yao, Xiaojun; Gao, Shang; Li, Hongbo

doi:10.1039/d0cp04160b

Cited by 31 publications

(11 citation statements)

References 60 publications

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“…The optimum spacing for pattern a is 3.5 Å and the optimum spacing for patterns b and c is 3.6 Å at their lowest binding energy. This result shows that graphene and AlP are mainly combined through the vdW force, and the interlayer spacing is close to that of typical vdW heterostructures such as graphene/MoS 2 [35], graphene/WSe 2 [36] and graphene/InTe [37]. Meanwhile, this further confirms that pattern a has the lowest binding energy and smallest layer spacing compared with patterns b and c. Therefore, we will focus on pattern a hereafter.…”

Section: Structural Stability Of Graphene/alp Heterostructuressupporting

confidence: 70%

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

Zhang¹,

Shi²,

He³

et al. 2023

Semicond. Sci. Technol.

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The controllable modulation of the electronic properties of two-dimensional van der Waals (vdW) heterostructures is crucial for their applications in the future nanoelectronic and optoelectronic devices. In this paper, the electronic properties of a graphene/AlP heterostructure are theoretically studied by first-principles calculation. The results show that due to the weak vdW interaction between graphene and the AlP monolayer, both the Dirac semi-metallic properties of graphene and the semiconductivity properties of monolayer AlP are well retained. The graphene/AlP heterostructure forms a 0.41 eV p-type Schottky contact, and the barrier height and contact type can be successively controlled by the applied external electric field and vertical stress. When the applied electric field exceeds −0.5 V Å−1, the heterostructure interface changes from a p-type Schottky contact to an n-type Schottky contact. When the applied electric field exceeds 0.4 V Å−1 or the interlayer spacing is less than 3.1 Å, the interface contact type changes to Ohmic contact. These results indicate that the graphene/AlP heterostucture behaves as tunable Schottky barrier for potential applications in nano-devices.

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Section: Structural Stability Of Graphene/alp Heterostructuressupporting

confidence: 70%

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

Zhang¹,

Shi²,

He³

et al. 2023

Semicond. Sci. Technol.

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“…The previous work showed that the interfacial contact properties of the heterostructure are closely related to the performance of devices . Here, the lattice matching and proper energy band position are the key parameters that affect the structural stability and charge-transfer efficiency of the system.…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive Band Alignment of the Graphene/MoSi₂N₄ Heterojunction via an External Electric Field

Yuan

Cheng

et al. 2022

ACS Appl. Electron. Mater.

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The combination of graphene (GR) and monolayer MoSi2N4 has attracted much attention; however, the comprehension of its electrical contact modulation is still not fully explored. Herein, the influence of the interlayer spacing and external electric field on the interfacial characteristic and electronic structure of the GR/MoSi2N4 heterojunction was systematically investigated using first-principles calculations. It is found that a stable van der Waals heterojunction forms when GR incorporates on the MoSi2N4 sheets. The results indicate that both the type and height of the Schottky barrier could be tuned by altering the interlayer spacing between GR and MoSi2N4 sheets or applying a vertical external electric field on the GR/MoSi2N4 heterojunction. Noteworthily, the Schottky barrier height markedly changes about 0.2–0.3 eV with the increase of external electric field per 0.1 V·Å–1. It is confirmed that the change of energy bands is caused by the charge redistribution with the interlayer spacing and external electric field. These findings will provide rational evidence for the design of next-generation field-effect transistors.

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“…The results show that E ⊥ is of great value in adjusting the E g of the 2D structure. 46,47 Compared with the HSE06 method, the PBE method can conveniently obtain almost the same theoretical band trend (refer to Table 1 and Table S1, ESI†). Therefore, we use the PBE method to explore the electronic properties of the twisted BP structure under E ⊥ , which plays a significant role in guiding future experimental research.…”

Section: Resultsmentioning

confidence: 98%

Twist angle and electric gating controllable electronic structure of the two-dimensional stacked BP homo-structure

Yao,

Yun,

Kang

et al. 2024

Phys. Chem. Chem. Phys.

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Tunable electronic properties and Schottky barrier in a graphene/WSe₂ heterostructure under out-of-plane strain and an electric field

Abstract: Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge. To solve this issue, the electronic properties and Schottky barrier of the...

Cited by 31 publications

References 60 publications

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

Highly Sensitive Band Alignment of the Graphene/MoSi₂N₄ Heterojunction via an External Electric Field

Twist angle and electric gating controllable electronic structure of the two-dimensional stacked BP homo-structure

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Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field

Abstract: Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge. To solve this issue, the electronic properties and Schottky barrier of the...

Cited by 31 publications

References 60 publications

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

Tunable Schottky barrier in a graphene/AlP van der Waals heterostructure

Highly Sensitive Band Alignment of the Graphene/MoSi2N4 Heterojunction via an External Electric Field

Twist angle and electric gating controllable electronic structure of the two-dimensional stacked BP homo-structure

Contact Info

Product

Resources

About

Tunable electronic properties and Schottky barrier in a graphene/WSe₂ heterostructure under out-of-plane strain and an electric field

Highly Sensitive Band Alignment of the Graphene/MoSi₂N₄ Heterojunction via an External Electric Field