Tunable dielectric properties of lead barium zirconate niobate films

Abstract

The effect of substitution of niobium for zirconium on tunable behavior of lead barium zirconate (PBZ) films was investigated. Lead barium zirconate niobate films were grown on Pt∕Ti∕SiO2∕Si substrates using chemical solution deposition method. The substitution of Nb for Zr enhances tunable properties of PBZ films. The dielectric tunabilities are excellent, all higher than 45% with a maximum=60%. The substitution of Nb for Zr raises values of figure of merit (FOM) of films. The maximum FOM takes place at 5mol% Nb with a value of 90, which is about three times that of the corresponding PBZ film.

Dielectric properties of BaMg1∕3Nb2∕3O3 doped Ba0.45Sr0.55Tio3 thin films for tunable microwave applications

“…Then, the films were lithographically patterned and ion milled to devices consisting of two 0:5 Â 0:5 mm 2 top electrodes separated by 0.2 mm gap (equivalent to two capacitors connected in series). To repair the ion milling damages, the films were annealed at 650 C in oxygen flow (15 crystalline microstructure, without visible cracks, pinholes or other defects. However, the AFM images demonstrated that doping has appreciably suppressed the film surface roughness reducing it from 7 nm for undoped BST down to 5 nm ($28% reduction).…”

“…Adding Mg 2þ ($1-5 mol%) suppresses the dielectric loss and the LC; but, these come with a huge drop in dielectric constant and tunability of the BST film. 4,11 Conversely, doping BST with Nb 5þ ($5 mol%) increases the dielectric constant and tenability; 8,12,15 however, these are accompanied by the increase of dielectric loss and LC, mainly due to the excess electron that Nb donates when it substitutes Ti site. 6,13,14 Doping BST with Mg 2þ and Nb 5þ concomitantly may improve both the tunability and insulating properties of BST.…”

Structure and dielectric properties of (Na0.5Bi0.5)TiO3–SrTiO3 thick films derived from polyvinylpyrrolidone-modified chemical solution

“…Currently, numbers of lead-containing ferroelectric materials, such as Pb(Zr,Ti)O 3 (PZT), (Pb,Ba)ZrTiO 3 (PBZ) and (Pb,Ba)(Zr,Nb)O 3 (PBZN), have achieved significant dielectric tunability and the value of figure of merit (FOM), due to their superior dielectric performance and nonlinear dependence of the dielectric constant upon the applied field [1,2]. However, considering the toxicity of lead, many countries setup environmental regulations to restrict the usage of lead in electronic devices.…”

Ferroelectric and Incipient Ferroelectric Properties of a Novel Sr9−xPbxCe2Ti2O36(x = 0−9) Ceramic System

“…SrTiO 3 , CaTiO 3 and KTaO 3 exhibit high permittivity and no MW dielectric dispersion (i.e. low MW losses).…”

“…1,2,3 Ferroelectric (FE) materials are used for this application as they have high dielectric permittivity ε' close to the FE phase transition temperature T C which can be tuned by an electric field [1][2][3] . However, in general, materials in the FE phase exhibit higher dielectric losses due to the absorption of FE domain walls.…”