2016
DOI: 10.1002/adom.201600452
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Tunable Complete Optical Absorption in Multilayer Structures Including Ge2Sb2Te5 without Lithographic Patterns

Abstract: Perfect light absorption over wide angles is possible in a multilayer structure, including Au or Ni metal and Ge2Sb2Te5 (GST) phase change material, without the need of sophisticated lithography. The GST layer also permits deep modulation of the absorption when it undergoes a phase transition.

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Cited by 52 publications
(33 citation statements)
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“…44 Moreover, compared to the other active mediums, such as LCs, ENZ, and VO 2 , the amorphous (AM)to-crystalline (CR) state transition in the most investigated PCMs, Ge 2 Sb 2 Te 5 (GST225), is nonvolatility, 45,46 which makes it ideal for tunable metadevices. 28,[47][48][49][50][51][52][53][54][55][56][57] For example, energy is only required for the state transition process rather than to uphold a particular state, enabling the GST225-based metasurface to be attractive from a green technology standpoint. Notably, the refractive index of the GST225 experiences the largest variation of ∼2.8 across the phase change in the NIR region.…”
Section: Introductionmentioning
confidence: 99%
“…44 Moreover, compared to the other active mediums, such as LCs, ENZ, and VO 2 , the amorphous (AM)to-crystalline (CR) state transition in the most investigated PCMs, Ge 2 Sb 2 Te 5 (GST225), is nonvolatility, 45,46 which makes it ideal for tunable metadevices. 28,[47][48][49][50][51][52][53][54][55][56][57] For example, energy is only required for the state transition process rather than to uphold a particular state, enabling the GST225-based metasurface to be attractive from a green technology standpoint. Notably, the refractive index of the GST225 experiences the largest variation of ∼2.8 across the phase change in the NIR region.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, unlike silica glasses, the low phonon energies of chalcogenides allow them to be transparent in the M‐IR . The fast switching between two structural states of the phase change data storage material, Ge 2 Sb 2 Te 5 (GST), make it ideal for active photonic devices . Notably, in the M‐IR region GST exhibits a pronounced contrast in the real part of the permittivity (ε r ), and a negligibly small ratio of the imaginary (ε i ) to the ε r , indicating low absorptive losses .…”
Section: Introductionmentioning
confidence: 99%
“…[ 12,14–16 ] Because of the variability of their electrical properties (mainly resistance), PCMs have been widely used in nonvolatile electric fields, such as high‐density memories. [ 17–23 ] Because of the variability of their optical properties (mainly optical constants, [ 9,24,25 ] reflectivity, [ 26,27 ] transmission, [ 25,28,29 ] absorption, [ 30,31 ] and emissivity [ 32 ] ), PCMs been widely applied in nonvolatile photonic applications, such as all‐photonic memories, [ 26,33,34 ] active absorbers, [ 35 ] filters, [ 25 ] lenses, [ 34,36 ] sensors, [ 36 ] displays, etc. [ 26,27,37–39 ] Among the above optical applications, the PCM‐based solid‐state reflective display [ 27 ] is a revolutionary display technology.…”
Section: Introductionmentioning
confidence: 99%