Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors

Choi, Young Jin; Kim, Jong Su; Cho, Joon Young; Woo, Hwi Je; Yang, Jee Hye; Song, Young Jae; Kang, Moon Sung; Han, Joong Tark; Cho, Jeong Ho

doi:10.1021/acs.chemmater.7b03460

Cited by 34 publications

(30 citation statements)

References 48 publications

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“…In such device cases, graphene, whose Fermi energy can be tuned by gate electric field, acts as an ideal source electrode to tune the Schottky barrier in VFETs . However, the performance of reported VFETs is still poor, especially for organic VFETs, e.g., demonstrating relatively low on/off ratio and current density . The main reasons are attributed to inferior charge transport in active semiconducting layer and/or the difficulties in suppressing off‐state current, which is induced by intrinsically insufficient Schottky barrier between graphene and organic semiconductors as well as the penetration influence of thermally evaporated metal atoms in vertical devices …”

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confidence: 99%

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

et al. 2018

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Organic vertical field‐effect transistors (VFETs) have attracted significant attention over the past years due to their unique characteristics of high output currents, low operation voltages, high working frequency, and promising high‐density integration for circuits. However, most currently reported VFETs demonstrate poor performance, e.g., with low on/off ratio and current density. Here, the first organic‐single‐crystal vertical field‐effect transistors (SC‐VFETs) and phototransistors are constructed from 2,6‐diphenyl anthracene (DPA) through a modified method. The devices exhibit high on/off ratio of 106 and a high current density of 100 mA cm‐2 under a small voltage of −5 V, which are proved to be one of the best performances for organic VFETs. Furthermore, superior photoresponse performance with photoresponsivity of 110 A W‐1 and detectivity of 1013 Jones is obtained under light illumination for vertical phototransistors. These results confirm the control of the intrinsic Schottky barrier height at the graphene–DPA junction along with good interfacial contact effectively suppressing the dark current to realize a large on/off ratio and high light detectivity. This vertical integration of graphene with organic single crystals via simple, effective fabrication processes opens up new opportunities to realize high‐performance integrated organic vertical electronic and optoelectronic devices.

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confidence: 99%

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

et al. 2018

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“…Depending on the governing charge transport/extraction mechanism, the slope of each graph along the 1/ V eff axis is determined to be either negative, positive, or a plateau (details in Figure S7, Supporting Information). [ 8 ] Apparently, the ternary MOSSFET architecture demonstrates a clear conversion of the slopes from negative to positive then a plateau, which signifies the transition of the governing mechanism from the field‐effect charge tunneling to field‐effect charge transport. This behavior is not observed in conventional n‐type MOSFETs (NMOS) where they exhibit invariance over the change of 1/ V eff .…”

Section: Resultsmentioning

confidence: 99%

“…Since the top layer does not constitute the channel region of the MOSSFET, the current flow through the top layer is governed mostly by the injection behaviors. When the energy‐level offsets are sufficiently large, the charge injection at the semiconductor–semiconductor interface obeys the Fowler–Nordheim model (field‐effect tunneling model) (Figure S7, Supporting Information) as follows: [ 8,11 ]

\begin{matrix} J_{t, i n j} \propto {(\frac{V}{d})}^{2} \exp (- B d \frac{ϕ_{B}^{1.5}}{V}) \end{matrix}

…”

Section: Resultsmentioning

confidence: 99%

Multi‐State Heterojunction Transistors Based on Field‐Effect Tunneling–Transport Transitions

Lim

Kang

et al. 2021

Advanced Materials

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A monolithic ternary logic transistor based on a vertically stacked double n‐type semiconductor heterostructure is presented. Incorporation of the organic heterostructure into the conventional metal‐oxide‐semiconductor field‐effect transistor (MOSFET) architecture induces the generation of stable multiple logic states in the device; these states can be further optimized to be equiprobable and distinctive, which are the most desirable and requisite properties for multivalued logic devices. A systematic investigation reveals that the electrical properties of the device are governed by not only the conventional field‐effect charge transport but also the field‐effect charge tunneling at the heterointerfaces, and thus, an intermediate state can be finely tuned by independently controlling the transition between the onsets of these two mechanisms. The achieved device performance agrees with the results of a numerical simulation based on a pseudo‐metal–insulator–metal model; the obtained findings therefore provide rational criteria for material selection in a simple energetic perspective. The operation of various ternary logic circuits based on the optimized multistate heterojunction transistors, including the NMIN and NMAX gates, is also demonstrated.

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“…Vertical heterostructure devices are fabricated by a typical procedure in the following steps: preparation of 2D graphene on a gate dielectric, deposition of the organic semiconductor, and deposition of top electrodes. The vertical barristor is based on the principle that the current through vertical graphene/organic junctions can be finely controlled between “on” and “off” via modification of the gate‐tunable Schottky barrier height …”

Section: Electronic and Optoelectronic Applicationsmentioning

confidence: 99%

2D–Organic Hybrid Heterostructures for Optoelectronic Applications

et al. 2019

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The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low-cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D-organic heterostructures-from their synthesis and fabrication to their state-of-the-art optoelectronic applications-is presented. Future challenges and opportunities associated with these heterostructures are highlighted.solution-processed on any substrate inexpensively and at relatively low temperatures, which is highly advantageous for their scale-up from fundamental studies to industrial-level production. [6][7][8][9][10] Initial examples of developed organic semiconductors include field-effect transistors (FETs), [4,5,[11][12][13][14][15] photodetectors (PDs), [5,16,17] photovoltaics (PVs), [5,16,18,19] light-emitting diodes (LEDs), [5,16,20] and so on. In spite of the demonstration of promising prototypes of organic semiconductors, their development and optimization for highperformance device applications remain a challenge. In particular, it is becoming increasingly difficult to impart suitable properties to individual materials and realize appropriate physical dimensions in order to satisfy increasing demands of multifunctionality for fundamental studies, device designs, and performance optimization. [21,22] Consequently, such challenges and opportunities can be addressed by performing multidimensional integration or hybridization of organic semiconductors with various types of materials having potentially novel functionalities and unique properties.2D van der Waals (vdW) materials are the most obvious candidate for such hybridization with organic semiconductors. [22,23] Since the discovery of graphene, which opened up new avenues ranging from fundamental studies to real-world applications, [24][25][26][27] several other groups of 2D vdW materials have also been discovered, such as hexagonal boron nitride (h-BN), [28,29] transition metal dichalcogenides (TMDCs), [23,[30][31][32][33][34] black phosphorus (BP), [35][36][37][38][39][40] borophene, [41][42][43] silicene, [43] and germanene. [43] The 2D structure has been demonstrated to possess several exceptional electrical, optical, mechanical, and thermal properties vis-à-vis its corresponding bulk counterpart. [22,25,27] Most importantly, from the viewpoint of hybridization with organic semiconductors, the atomically flat and dangling-bond-free surface of 2D vdW materials not only provides an ideal int...

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Tunable Charge Injection via Solution-Processed Reduced Graphene Oxide Electrode for Vertical Schottky Barrier Transistors

Cited by 34 publications

References 48 publications

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

Organic‐Single‐Crystal Vertical Field‐Effect Transistors and Phototransistors

Multi‐State Heterojunction Transistors Based on Field‐Effect Tunneling–Transport Transitions

2D–Organic Hybrid Heterostructures for Optoelectronic Applications

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