Tunable bandgap in few-layer black phosphorus by electrical field

Li, Dong; Xu, Jinrong; Ba, Kun; Xuan, Ningning; Chen, Mingyuan; Sun, Zhengzong; Zhang, Yuzhong

doi:10.1088/2053-1583/aa7c98

Cited by 35 publications

(24 citation statements)

References 45 publications

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“…Bandgap modulation induced by a vertical electric field has also been observed in electrical experiments 156,[160][161][162][163] , with significant impact on the transport properties of 2D materials as well. For example, a room-temperature hole Hall mobility of few-layer BP as high as 5000 cm 2 /Vs is reported in BN/BP/BN van der Waals 278 .…”

Section: External Electric Field Effectmentioning

confidence: 74%

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Bandgap engineering of two-dimensional semiconductor materials

et al. 2020

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Semiconductors are the basis of many vital technologies such as electronics, computing, communications, optoelectronics, and sensing. Modern semiconductor technology can trace its origins to the invention of the point contact transistor in 1947. This demonstration paved the way for the development of discrete and integrated semiconductor devices and circuits that has helped to build a modern society where semiconductors are ubiquitous components of everyday life. A key property that determines the semiconductor electrical and optical properties is the bandgap. Beyond graphene, recently discovered two-dimensional (2D) materials possess semiconducting bandgaps ranging from the terahertz and mid-infrared in bilayer graphene and black phosphorus, visible in transition metal dichalcogenides, to the ultraviolet in hexagonal boron nitride. In particular, these 2D materials were demonstrated to exhibit highly tunable bandgaps, achieved via the control of layers number, heterostructuring, strain engineering, chemical doping, alloying, intercalation, substrate engineering, as well as an external electric field. We provide a review of the basic physical principles of these various techniques on the engineering of quasi-particle and optical bandgaps, their bandgap tunability, potentials and limitations in practical realization in future 2D device technologies.

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Section: External Electric Field Effectmentioning

confidence: 74%

“…Heterostructures can therefore be designed and synthesized with minimal regard for lattice matching. Panels reproduced with permission from a reprinted with permission from 132 quantum well 160 , which exceeds the theoretical limit 161 without consideration of QCFK 156,162,163 .…”

Section: External Electric Field Effectmentioning

confidence: 99%

Bandgap engineering of two-dimensional semiconductor materials

et al. 2020

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“…Due to the stringent requirement of a direct bandgap, mainly monolayer flakes of TMDCs are used in EL devices. However, some of the 2DLMs such as ReS 2 , black phosphorus, and InSe have direct bandgap in bulk as well [53][54][55]. The emitted light is characterized by material properties and operation conditions.…”

Section: Electroluminescence (El)mentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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“…For optical applications, the 0.3 eV direct bandgap makes BP interact strongly with mid‐infrared photons and those with even higher energy . Moreover, it was discovered recently that the bandgap of thin‐film BP can be efficiently tuned simply by an electrical gating approach, which may allow for the exploration of new physical phenomena and enable more device applications . Another distinct feature of black phosphorus is the strong in‐plane anisotropy, which originates from the puckered arrangement of phosphorus atoms (shown in Figure a) .…”

Section: Introductionmentioning

confidence: 99%

Progress on Black Phosphorus Photonics

Deng

Frisenda

et al. 2018

Advanced Optical Materials

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between light and graphene is weak, although it is extremely strong if normalized to its atomic thickness. [15,[20][21][22] Also, because graphene is semimetallic, the optoelectronic devices suffer from large dark current, and therefore high noise level and high power consumption. [23][24][25][26][27] The bandgaps of semiconducting transition metal dichalcogenides (TMDCs) are in general in the range of ≈1-2 eV, leading to limited optical response in technically critical infrared wavelength range. [15,28] Few-layer TMDCs, however, as long as they are thicker than monolayer, are no longer direct bandgap semiconductors. [29,30] Hexagonal-boron nitride (h-BN) has a bandgap of about 6 eV, therefore it is an insulator. [15,31] Black phosphorus provides an opportunity to cover the near and mid-infrared wavelength range. In its bulk form, black phosphorus has a bandgap of ≈0.3 eV. [2][3][4][5][6] This value increases as the thickness of BP thin film goes down, and finally reaches ≈2 eV for the monolayer due the vertical quantum confinement effect, which is a common phenomenon for many semiconducting layered materials. [9,32,33] It is also worth noticing that the bandgap is direct regardless of its thickness. [8,9] The finite bandgap is critical for electronic devices, since it ensures high on-off ratio for a transistor, [3] and significantly reduces dark current. [34] For optical applications, the 0.3 eV direct bandgap makes BP interact strongly with mid-infrared photons and those with even higher energy. [5] Moreover, it was discovered recently that the bandgap of thin-film BP can be efficiently tuned simply by an electrical gating approach, which may allow for the exploration of new physical phenomena and enable more device applications. [35][36][37][38][39][40][41] Another distinct feature of black phosphorus is the strong in-plane anisotropy, which originates from the puckered arrangement of phosphorus atoms (shown in Figure 1a). [5] This reduced symmetry results in specific optical transition rules in the momentum space and thus linear dichroic optical properties. [8,42] Due to these desirable properties, a few proof-ofconcept devices have been demonstrated with various functionalities. [3,[43][44][45][46][47][48][49][50] Toward the practical applications of BP, long-term stability is highly desirable. Although naked black phosphorus can oxidize under ambient environment, [7,51] researchers have developed a number of encapsulation and surface passivation schemes to dramatically improve its long term stability. [52][53][54][55][56] Large-scale controllable production of BP thin film is still at its infancy; nevertheless, encouraging progress is being continuously made. [57][58][59] In this review, we will also discuss the BP synthesis, since it is critical for future BP applications in photonics.Recent years have witnessed the rapidly growing interests in the rediscovered black phosphorus (BP), an elemental group-V layered material with very high carrier mobility among all semiconducting layered materials. As a layer...

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Tunable bandgap in few-layer black phosphorus by electrical field

Cited by 35 publications

References 45 publications

Bandgap engineering of two-dimensional semiconductor materials

Bandgap engineering of two-dimensional semiconductor materials

Optoelectronic and photonic devices based on transition metal dichalcogenides

Progress on Black Phosphorus Photonics

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