Tunable Band Gaps in Bilayer Graphene−BN Heterostructures

Ramasubramaniam, Ashwin; Naveh, Doron; Towe, E.

doi:10.1021/nl1039499

Cited by 229 publications

(185 citation statements)

References 28 publications

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“…The lost sublattice symmetry (only each third C hexagon is occupied by a Li atom) is responsible for a band gap of 90 meV. This value agrees well with previous reports [18][19][20], which also applies to the fact that the B and N states appear far away from the Fermi level. The electronic band structure in Fig.…”

Section: (A) and 2(b) It Has Been Reported That The Carrier Densitysupporting

confidence: 91%

Substrate-enhanced superconductivity in Li-decorated graphene

Kaloni

Balatsky

Schwingenschlögl

2013

EPL

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We investigate the role of the substrate for the strength of the electon phonon coupling in Lidecorated graphene. We find that the interaction with a h-BN substrate leads to a significant enhancement from λ 0 = 0.62 to λ 1 = 0.67, which corresponds to a 25% increase of the transition temperature from T c0 = 10.33 K to T c1 = 12.98 K. The superconducting gaps amount to 1.56 meV (suspended) and 1.98 meV (supported). These findings open up a new route to enhanced superconducting transition temperatures in graphene-based materials by substrate engineering.

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Section: (A) and 2(b) It Has Been Reported That The Carrier Densitysupporting

confidence: 91%

Substrate-enhanced superconductivity in Li-decorated graphene

Kaloni

Balatsky

Schwingenschlögl

2013

EPL

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“…[51][52][53] For example, it is known that mechanical straining can alter the band gaps of graphene nanoribbons significantly. [51,[54][55][56][57][58][59] Similarly, it has also been shown that straining can change the band gaps for h-BN nanoribbons [15,18] and large area h-BN. [60] We note that in reference, [60] the authors investigated the bandgap as a function of strain to the strain where the bandgap eventually approaches zero.…”

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confidence: 94%

“…[10,14] For example, there is growing interest to tune the band gaps of 2D materials by adopting hybrid structures to utilize the large band gap of h-BN and the zero band gap of graphene to potentially realize a target band gap. [15][16][17] Now it has been revealed that mechanical strains can tune the band gaps of h-BN nanoribbons (h-BNNR). [18] This justifies the course to re-examine h-BN for all the extraordinary properties * Corresponding author.…”

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confidence: 99%

Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

Wang

Wei

et al. 2013

Materials Research Letters

149

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Current interest in two-dimensional materials extends from graphene to others systems like single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures to achieve exceptional properties that cannot be realized in graphene. The electrically insulating h-BN and semi-metal graphene may open good opportunities to realize a semiconductor by manipulating the morphology and composition of such heterogeneous structures. Here we report the mechanical properties of h-BN and its band structures tuned by mechanical straining by using the density functional theory calculations. The elastic properties, both the Young's modulus and bending rigidity for h-BN, are isotropic. However, its failure strength and failure strain show strong anisotropy. We reveal that there is a bi-linear dependence of band gap on the applied tensile strains in h-BN. Mechanical strain can tune single-layer h-BN from an insulator to a semiconductor, with a band gap in the 4.7eV to 1.5eV range.

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“…Indeed the functional characteristics of graphene on h-BN are drastically improved compared to conventional SiO2 substrates. [10][11][12] Furthermore h-BN allows to tune the band gap of graphene in heterostructures 8,13 or in hybridized single-layer systems 14 . Regarding the use of epitaxial BN monolayers as templates, several recent reports highlight functionalities gained by the decoupling and ordering properties of BN [15][16][17][18][19] .…”

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confidence: 99%