Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Xiao, Meixia; Yin, Xuwen; Song, Haiyang; Lv, Ying; Xiao, Beibei

doi:10.1016/j.physb.2024.415859

Physica B: Condensed Matter

2024

DOI: 10.1016/j.physb.2024.415859

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Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Meixia Xiao,

Xuwen Yin,

Haiyang Song

et al.

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Investigation of Be, Mg, Ti–adsorbed boron-germanene nanoribbons for nano applications

Ngoc,

Thuy

2024

J. Phys.: Condens. Matter

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One-dimensional systems are nanostructures of significant interest in research due to their numerous potential applications. This study focuses on the investigation of one-dimensional boron-germanene nanoribbons (BGeNRs) and BGeNRs doped with Be, Mg, and Ti. Density functional theory (DFT) combined with the Vienna Ab initio Simulation Package (VASP) forms the foundation of this research. The electromagnetic and optical properties of these structures are systematically examined. The findings reveal that all the studied structures exhibit metallic behavior, with differences in their magnetic properties. The magnetic moments of the pristine and Be-doped structures are both zero, whereas the Mg and Ti-doped structures exhibit magnetic moments of 0.012 μB and 2.234 μB, respectively. Partial density of states (PDOS) analyses highlight the contributions of various elements and the complex multi-orbital hybridization among them. The optical properties are investigated through the real and imaginary parts of the dielectric function, along with the absorption coefficient and electron-hole density. This study indicates potential applications in adsorption sensors, the modulation of system magnetism via adsorption, and information transmission technologies.

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Investigation of Be, Mg, Ti–adsorbed boron-germanene nanoribbons for nano applications

Ngoc,

Thuy

2024

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

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Tunable band gaps and high carrier mobilities in germanene by Si doping in the presence of an external electric field: Field effect transistors

Cited by 1 publication

References 50 publications

Investigation of Be, Mg, Ti–adsorbed boron-germanene nanoribbons for nano applications

Investigation of Be, Mg, Ti–adsorbed boron-germanene nanoribbons for nano applications

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