Tunability of the Superconductivity of NbSe2 Films Grown by Two-Step Vapor Deposition

Lin, Huihui; Chang, Meijuan; Fu, Xingjie; Li, Pengfei; Chen, Maoxin; Wu, Luyan; Yang, Fubin; Zhang, Quan

doi:10.3390/molecules28031059

Cited by 5 publications

(3 citation statements)

References 38 publications

(50 reference statements)

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“…The 2 nm thick Nb film was metallic, and the resistance decreased as the temperature decreased; however, it cannot exhibit superconducting properties at a temperature of approximately 1.8 K, which should be attributed to surface oxidation (Supplementary Fig. 1b ) 39 . The X-ray photoemission spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry results confirm that Nb was partially oxidized into a composite of Nb and Nb 2 O 5 after patterning by electron beam lithography and reaction ion etching; consequently, a partially oxidized Nb meandered nanowire with a width of 200 ± 10 nm was prepared (Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits

Wang

et al. 2023

Nat Commun

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Superconducting nanocircuits, which are usually fabricated from superconductor films, are the core of superconducting electronic devices. While emerging transition-metal dichalcogenide superconductors (TMDSCs) with exotic properties show promise for exploiting new superconducting mechanisms and applications, their environmental instability leads to a substantial challenge for the nondestructive preparation of TMDSC nanocircuits. Here, we report a universal strategy to fabricate TMDSC nanopatterns via a topotactic conversion method using prepatterned metals as precursors. Typically, robust NbSe2 meandering nanowires can be controllably manufactured on a wafer scale, by which a superconducting nanowire circuit is principally demonstrated toward potential single photon detection. Moreover, versatile superconducting nanocircuits, e.g., periodical circle/triangle hole arrays and spiral nanowires, can be prepared with selected TMD materials (NbS2, TiSe2, or MoTe2). This work provides a generic approach for fabricating nondestructive TMDSC nanocircuits with precise control, which paves the way for the application of TMDSCs in future electronics.

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Section: Resultsmentioning

confidence: 99%

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits

Wang

et al. 2023

Nat Commun

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“…Ion diffusion routes in these model electrodes are simplified compared with those in conventional powdery samples. Various thin film deposition methods for Nb–Se compounds have been reported, including chemical vapor deposition (CVD), , molecular beam epitaxy (MBE), , magnetron sputtering (MS), , and pulsed laser deposition (PLD). − Previously, we reported a PLD method based on a kilohertz (kHz) 1064 nm laser and utilized it in the production of a thin film Li-ion battery . The benefits include a fast deposition rate, a large depositing area, and affordable equipment cost.…”

Section: Introductionmentioning

confidence: 99%

Nb–Se–C Thin Films Deposited by a 1064 nm Laser as Model Electrodes for Li⁺ and Na⁺ Storage

Li,

Yuan,

Dong

et al. 2024

ACS Appl. Energy Mater.

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Chalcogen elements, typically sulfur and selenium, could be used for energy storage either in elemental form based on Q/Q 2− redox or in layered transition metal chalcogenides, which allow insertion/extraction of Li + /Na + /K + /Mg 2+ . These two types of chalcogen-containing materials were rarely discussed together because of their significantly different synthetic routes, except for being mentioned in regard to the over-reduction of chalcogenides into elemental chalcogens. Recently, in attempts to deposit Nb 2 Se 2 C MXene by ablating a Nb−Se−C target using a 1064 nm fiber laser, a series of selenium-containing thin films were obtained as model electrodes. It was discovered that substrate temperature strongly affected the composition, structure, and accordingly the electrochemical performance of these thin films. From room temperature (RT) to 100 °C, the thin films were amorphous and selenium-abundant. Niobium mainly aggregated in metallic form. Both the Raman scattering and Li + storage performances were close to those of a pure selenium cathode. With increasing substrate temperature, selenium partially evaporated to vacuum and partially reacted with Nb to form layered NbSe 2 at ∼300 °C and layered Nb 2 Se 3 at above 400 °C. All these thin films exhibited Li + storage capacity of over 600 mAh g −1 and Na + storage capacity of over 350 mAh g −1 (except for the RT-Na sample) at the charge/discharge rate of 0.1 A g −1 . These discoveries reveal the structural evolution from near elemental selenium to layered niobium selenides and their Li + /Na + storage capability. It also demonstrates the feasibility of the 1064 nm laser for depositing high-performance and binder-free thin film electrodes.

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“…EuS was chosen as it is a known ferromagnet with T c = 16.6 K − and is simple to synthesize from the elements. NbSe 2 was chosen as it is a known superconductor with a tunable critical temperature of between 5 and 7.2 K, , and more crucially, a very large second critical field, , meaning the superconductivity is not easily quenched by strong magnetism. The composition of this particular misfit is also unusual in that it uses a mixed-anion framework.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Physical Properties of the Misfit Layered Compound (EuS)_1.13(NbSe₂)₂

Ng,

Foley,

Zhang

et al. 2024

Inorg. Chem.

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A new misfit layered compound with the stoichiometry (EuS)1+δ(NbSe2)2 (δ ≈ 0.13) has been successfully synthesized. High-resolution transmission electron microscopy and powder X-ray diffraction confirm the misfit structure with (EuS)–(EuS) spacing of 18.30(1) Å. Magnetization, electrical resistivity, heat capacity, and thermal transport measurements show that the material is a heavily doped semiconductor or poor metal with a low thermal conductivity of ∼1 W/m K and an antiferromagnetic ordering transition at T N = 4.7 K. In contrast to the parent materials, the misfit is neither ferromagnetic nor superconducting down to T = 0.4 K. We find evidence of a field-driven transition to a ferromagnetic state due to reorientation of ferromagnetic EuS layers at μo H = 0.5 T at T = 2 K.

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Tunability of the Superconductivity of NbSe2 Films Grown by Two-Step Vapor Deposition

Cited by 5 publications

References 38 publications

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits

Nb–Se–C Thin Films Deposited by a 1064 nm Laser as Model Electrodes for Li⁺ and Na⁺ Storage

Synthesis and Physical Properties of the Misfit Layered Compound (EuS)_1.13(NbSe₂)₂

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Tunability of the Superconductivity of NbSe2 Films Grown by Two-Step Vapor Deposition

Cited by 5 publications

References 38 publications

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits

Topotactic fabrication of transition metal dichalcogenide superconducting nanocircuits

Nb–Se–C Thin Films Deposited by a 1064 nm Laser as Model Electrodes for Li+ and Na+ Storage

Synthesis and Physical Properties of the Misfit Layered Compound (EuS)1.13(NbSe2)2

Contact Info

Product

Resources

About

Nb–Se–C Thin Films Deposited by a 1064 nm Laser as Model Electrodes for Li⁺ and Na⁺ Storage

Synthesis and Physical Properties of the Misfit Layered Compound (EuS)_1.13(NbSe₂)₂