2017 IEEE 12th International Conference on ASIC (ASICON) 2017
DOI: 10.1109/asicon.2017.8252566
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TSV modelling in 3D IC thermoelectric simulation

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“…The individual dies are referred to as tiers and they are made up of a silicon substrate, followed by a device layer with an interconnect layer on the top [2][3][4]. The early 3D designs involved the tiers being fabricated separately and placed on top of each other and connected with the help of vertical interconnects called through-silicon vias (TSVs) [5][6][7][8][9][10][11]. However, there were several disadvantages to the usage of TSVs compared to the utilization of the more recent technology of monolithic inter-tier vias (MIVs).…”
Section: Introductionmentioning
confidence: 99%
“…The individual dies are referred to as tiers and they are made up of a silicon substrate, followed by a device layer with an interconnect layer on the top [2][3][4]. The early 3D designs involved the tiers being fabricated separately and placed on top of each other and connected with the help of vertical interconnects called through-silicon vias (TSVs) [5][6][7][8][9][10][11]. However, there were several disadvantages to the usage of TSVs compared to the utilization of the more recent technology of monolithic inter-tier vias (MIVs).…”
Section: Introductionmentioning
confidence: 99%